Abstract: A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

Abstract: A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.