Abstract: This disclosure provides a method of preparing a silanol-functional organosilicon compound with a cytochrome P450 variant that facilitates the oxidization of a silyl hydride group to a silanol group in the presence of oxygen. The method includes combining the cytochrome P450 variant and an organosilicon compound having at least one silicon-bonded hydrogen atom to give a reaction mixture and exposing the reaction mixture to oxygen to oxidize the organosilicon compound, thereby preparing the silanol-functional organosilicon compound. Cytochrome P450 variants suitable for use in the method are also disclosed, along with methods for engineering and optimizing the same. Nucleic acids encoding the cytochrome P450 variants and compositions, expression vectors, and host cells including the same are also disclosed.

Abstract: A method comprises separate and consecutive steps (i) and (ii). Step (i) includes contacting a copper catalyst with hydrogen gas and a halogenated silane monomer at a temperature of 500° C. to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon. Step (ii) includes contacting the silicon-containing copper catalyst with an organohalide at a temperature of 100° C. to 600° C. to form a reaction product. The organohalide has formula HaCbXc, where X is a halogen atom, subscript a is an integer of 0 or more, subscript b is an integer of 1 or more, and subscript c is an integer of 2 or more. The method produces a reaction product. The reaction product includes a halogenated silahydrocarbylene.

Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.

Abstract: A method comprises separate and consecutive steps (i) and (ii). Step (i) includes contacting a copper catalyst with hydrogen gas and a halogenated silane monomer at a temperature of 500° C. to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon. Step (ii) includes contacting the silicon-containing copper catalyst with an organohalide at a temperature of 100° C. to 600° C. to form a reaction product. The organohalide has formula HaCbXc, where X is a halogen atom, subscript a is an integer of 0 or more, subscript b is an integer of 1 or more, and subscript c is an integer of 2 or more. The method produces a reaction product. The reaction product includes a halogenated silahydrocarbylene.

Abstract: A mixture of at least one polysilane and at least one polycarbosilane is formed in the presence of a metal silicide. The mixture is formed utilizing a method that includes the step of combining the metal silicide and an alkyl halide in a reactor at a temperature of from 200° C. to 600° C. The alkyl halide has the formula RX, wherein R is C1-C10 alkyl and X is halo. This method forms high yield mixtures of the at least one polysilane and the at least one polycarbosilane. Additionally, the mixture is time and cost effective and allows the mixture to be formed in a predictable and controlled manner. Moreover, the components used in this method can be easily recycled and/or re-used in other processes.

Abstract: A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.

Abstract: Films and electronic devices can be released from metallic substrates by: (i) applying a coating of a polysilsesquioxane resin to a metallic substrate, (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, (iii) applying a polymeric film to the cured coating on the metallic substrate, (iv) further heating the coated metallic substrate to a temperature sufficient to cure the polymeric film, (v) optionally fabricating electronic devices on the polymeric film, and (vi) releasing the polymeric film from the metallic substrate.

Abstract: A cured organopolysiloxane resin film having gas barrier properties comprising a fiber-reinforced film made of a hydrosilylation-cured organopolysiloxane resin and having a transparent inorganic layer selected from silicon oxynitride layer, silicon nitride layer, and silicon oxide layer formed on the fiber-reinforced film wherein a layer of cured organopolysiloxane that contains an organic functional group, silanol group, hydrosilyl group, or an organic group produced by the polymerization of polymerizable organic functional groups is interposed between said fiber-reinforced film and inorganic layer. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.

Abstract: A method of manufacturing an inorganic substrate coated with a thin silica type glass layer of 2H to 9H pencil hardness, said method comprising the steps of: coating an inorganic substrate with a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula, and curing it; an inorganic substrate coated with a thin silica type glass layer; a coating agent for an inorganic substrate that is composed of a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula; and a semiconductor device having an inorganic substrate coated with a thin silica type glass layer.

Abstract: In an embodiment, one reinforced substrate for use in a photovoltaic device includes a polymer base material and a reinforcing structure bonded with the base material. The reinforced substrate presents a surface in a condition that is made-ready for deposition of thin film layers of the photovoltaic device. A thin film photovoltaic device includes the reinforced substrate, a back contact layer formed on the surface of the reinforced substrate, and a solar absorber layer formed on the back contact layer. A plurality of thin film photovoltaic devices may be formed on a common reinforced substrate. A process of producing a reinforced substrate includes combining a fluid base material and a fiber reinforcing structure to form an impregnated fiber reinforcement. The impregnated fiber reinforcement is cured to form the reinforced substrate, and the reinforced substrate is annealed.

Abstract: Cyclic dihydrogenpolysiloxanes, hydrogenpolysiloxanes of specific siloxane unit formulas etc., a process for their production using hydrolysis/condensation, a process for the production of silica type glass moldings with an optical transmittance of 90% to 100% in the vacuum-UV region to UV region and an optical transmittance of 98% to 100% in the visible region to near infrared region by curing said cyclic dihydrogensiloxanes or said hydrogenpolysiloxanes in a mold, said silica type glass moldings, optical elements made up of the silica type glass, a process for the production of optical elements having such a silica type glass film layer by coating an optical element with the hydrogenpolysiloxanes and curing them, and optical elements having such a silica type glass film layer.

Abstract: A method of preparing a reinforced silicone resin film, the method comprising the steps of impregnating a fiber reinforcement in a hydrosilylation-curable silicone composition comprising a silicone resin, and heating the impregnated fiber reinforcement at a temperature sufficient to cure the silicone resin, wherein the reinforced silicone resin film comprises from 10 to 99% (w/w) of the cured silicone resin and the film has a thickness of from 15 to 500 ?m; and a reinforced silicone resin film prepared according to the method.

Abstract: A method of preparing a reinforced silicone resin film, the method comprising the steps of impregnating a fiber reinforcement in a condensation-curable silicone composition comprising a silicone resin, and curing the silicone resin in the condensation-curable silicone composition of the impregnated fiber reinforcement; wherein the reinforced silicone resin film comprises from 10 to 99% (w/w) of the cured silicone resin and the film has a thickness of from 15 to 500 ?m; and a reinforced silicone resin film prepared according to the method.

Abstract: A method of preparing a reinforced silicone resin film, the method comprising the steps of impregnating a fiber reinforcement in a condensation-curable silicone composition comprising a silicone resin, and curing the silicone resin in the condensation-curable silicone composition of the impregnated fiber reinforcement; wherein the reinforced silicone resin film comprises from 10 to 99% (w/w) of the cured silicone resin and the film has a thickness of from 15 to 500 ?m; and a reinforced silicone resin film prepared according to the method.

Abstract: A cured organopolysiloxane resin film having gas barrier properties in which a layer of cured organopolysiloxane that contains an organic functional group, an organic group produced by the polymerization of polymerizable organic functional groups, or the hydrosilyl group or silanol group, is formed on a visible region-transparent film comprising cured organopolysiloxane resin yielded by hydrosilylation reaction-mediated crosslinking, and in which a silicon oxynitride layer, silicon nitride layer, or silicon oxide layer is formed on the aforementioned layer of cured organopolysiloxane. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.

Abstract: A method of forming a ceramic silicon oxide type coating and a method of producing an inorganic base material having this coating, by coating an organohydrogensiloxane/hydrogensiloxane copolymer on the surface of an inorganic base material and converting the coating into a ceramic silicon oxide type coating by heating to high temperatures in an inert gas or an oxygen-containing inert gas (oxygen gas less than 20 volume %). A coating-forming agent comprising an organohydrogensiloxane/hydrogensiloxane copolymer or its solution. A semiconductor device comprising at least a semiconductor layer formed on a silicon oxide type coating on an inorganic substrate.

Abstract: A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.

Abstract: A composite article includes a first window layer formed from a vitreous material and a reinforced silicone layer disposed adjacent the first window layer. The reinforced silicone layer includes a cured silicone composition and a fiber reinforcement. Due to the presence of the cured silicone composition in the reinforced silicone layer, the composite article exhibits excellent fire resistance and will not emit as much smoke and toxic gases as composite articles including primarily carbon-based materials. Further, due to the presence of the fiber reinforcement in the reinforced silicone layer, the composite article maintains excellent structural integrity even after a breach is formed in the composite article due to heat. As such, the composite articles of the subject invention may be suitable for load-bearing applications that are not possible with existing composite articles.

Abstract: A composite article includes a substrate having a surface, a cation-sensitive layer including a cation-sensitive material disposed on the surface of the substrate, and a silicone layer disposed between the substrate and the cation-sensitive layer. Cations are present on the surface of the substrate in an amount of at least 0.1 atomic weight percent based on the total atomic weight of the atoms on the surface of the substrate. The silicone layer includes a cured silicone composition for preventing cations from migrating from the substrate to the cation-sensitive layer. The inclusion of the silicone layer between the cation-sensitive layer and the substrate enables the use of materials for the substrate that have not been useable in the past due to the presence of excessive amounts of cations in the materials.

Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.