Patents by Inventor Dimitris P. Ioannou

Dimitris P. Ioannou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS device with reading circuit
    Patent number: 9640228
    Abstract: Methods and devices for providing unclonable chip identification are provided. An integrated circuit device includes: a first transistor having a first gate oxide thickness; a second transistor having a second gate oxide thickness different than the first gate oxide thickness; and a reading circuit connected to the first transistor and the second transistor, wherein the reading circuit reads a difference in threshold voltage between the first transistor and the second transistor.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: May 2, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Dimitris P. Ioannou, Chandrasekharan Kothandaraman
  • CMOS TRANSISTOR BIAS TEMPERATURE INSTABILITY BASED CHIP IDENTIFIER
    Publication number: 20160172011
    Abstract: Methods and devices for providing unclonable chip identification are provided. An integrated circuit device includes: a first transistor having a first gate oxide thickness; a second transistor having a second gate oxide thickness different than the first gate oxide thickness; and a reading circuit connected to the first transistor and the second transistor, wherein the reading circuit reads a difference in threshold voltage between the first transistor and the second transistor.
    Type: Application
    Filed: December 12, 2014
    Publication date: June 16, 2016
    Inventors: Dimitris P. IOANNOU, Chandrasekharan KOTHANDARAMAN
  • Measuring bias temperature instability induced ring oscillator frequency degradation
    Patent number: 8587383
    Abstract: A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: November 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: David G. Brochu, Jr., Dimitris P. Ioannou, Travis S. Merrill, Steven W. Mittl
  • Thermal sensor for semiconductor circuits
    Patent number: 8562210
    Abstract: A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: October 22, 2013
    Assignee: International Business Machines Corporation
    Inventors: Cathryn J. Christiansen, John A. Fifield, Dimitris P. Ioannou, Tom C. Lee, Lilian Kamal
  • MEASURING BIAS TEMPERATURE INSTABILITY INDUCED RING OSCILLATOR FREQUENCY DEGRADATION
    Publication number: 20130147562
    Abstract: A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).
    Type: Application
    Filed: December 7, 2011
    Publication date: June 13, 2013
    Applicant: Internatinal Business Machines Corporation
    Inventors: David G. Brochu, JR., Dimitris P. Ioannou, Travis S. Merrill, Steven W. Mittl
  • THERMAL SENSOR FOR SEMICONDUCTOR CIRCUITS
    Publication number: 20120128033
    Abstract: A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
    Type: Application
    Filed: November 19, 2010
    Publication date: May 24, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wagdi W. Abadeer, Cathryn J. Christiansen, John A. Fifield, Dimitris P. Ioannou, Tom C. Lee, Lilian Kamal