Abstract: A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.

Abstract: An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.

Abstract: A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.

Abstract: Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

Abstract: A reactor for a hot filament CVD, the reactor may include an array of filaments; a substrate support unit that is configured to support at least one substrate; a chamber that comprises multiple openings; a gas flow control unit that is coupled to the multiple openings and is configured to receive one or more CVD gases and direct the one or more CVD gases at one or more predefined directions within an energizing region formed by the array of filaments; and a movement system that is configured to introduce a movement between the array of filaments and the substrate support unit thereby selectively moving the at least one substrate in the energizing region and out of the energizing region.

Abstract: A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.

Abstract: An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.

Abstract: Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

Abstract: Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

Abstract: A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.

Abstract: Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

Abstract: A system and a method for milling and inspecting an object. The method may include performing at least one iteration of a sequence that includes: milling, by a particle beam, a first surface of the object, during a first surface milling period; obtaining, by an electron detector, an image of a second surface of the object during at least a majority of the first surface milling period; wherein the object is expected to comprise an element of interest (EOI) that is positioned between the first and second surfaces; milling, by the particle beam, the second surface of the object during a second surface milling period; wherein each of the first surface milling period and the second surface milling period has a duration that exceeds a long duration threshold; obtaining by the electron detector an image of the first surface of the object during at least a majority of the second surface milling period.

Abstract: A system and a method for milling and inspecting an object. The method may include performing at least one iteration of a sequence that includes: milling, by a particle beam, a first surface of the object, during a first surface milling period; obtaining, by an electron detector, an image of a second surface of the object during at least a majority of the first surface milling period; wherein the object is expected to comprise an element of interest (EOI) that is positioned between the first and second surfaces; milling, by the particle beam, the second surface of the object during a second surface milling period; wherein each of the first surface milling period and the second surface milling period has a duration that exceeds a long duration threshold; obtaining by the electron detector an image of the first surface of the object during at least a majority of the second surface milling period.

Abstract: A system and a method for preparing a lamella. The method may include aligning, by the manipulator, a mask and a sample. Positioning the mask and the sample in front of an ion miller while unchanging the spatial relationship between the mask and the sample. Milling a first exposed portion of the sample until exposing a first sidewall of the lamella. Positioning the mask and the sample in front of the ion miller so that the mask masks a second masked portion of the sample. Milling, by the ion miller, the second exposed portion of the sample until exposing a second sidewall of the lamella. Removing, by the miller, matter from both sides of the lamella; and detaching the lamella from the sample.

Abstract: A system and method for a sample, the method may include manipulating a mask and a sample and thereby exposing different sides of the sample to an ion miller. The manipulating may include rotating the mask and the sample while maintaining the spatial relationship between the sample and the mask unchanged.