Patents by Inventor Dinesh Kumar Penigalapati
Dinesh Kumar Penigalapati has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10262866Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: January 29, 2018Date of Patent: April 16, 2019Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20180166292Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: January 29, 2018Publication date: June 14, 2018Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9916985Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: May 20, 2016Date of Patent: March 13, 2018Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9890300Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: April 18, 2017Date of Patent: February 13, 2018Assignees: International Business Machines Corporation, JSR CorporationInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170218229Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: April 18, 2017Publication date: August 3, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646842Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646841Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CorporationInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110334Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110332Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110333Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka