Abstract: In embodiments, a method includes receiving, by a processing device, first sensor data generated by a plurality of sensors of a process chamber of a manufacturing system during execution of a fabrication process. The method includes receiving, by the processing device, second sensor data generated by one or more external sensors that are not components of the process chamber during execution of the fabrication process. The method includes determining, by the processing device, environmental resource usage data indicative of an environmental resource consumption of the fabrication process run on the process chamber based on the first sensor data and the second sensor data. The method includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: A system, apparatus and method for internet-based health and diagnostic monitoring of semiconductor manufacturing components include receiving health and diagnostic information and data from at least one component of a semiconductor manufacturing system, evaluating the received health and diagnostic information and data to determine if at least one of the at least one component of the semiconductor manufacturing system for which the health and diagnostic information and data was received is faulty, and if determined that at least one of the at least one component of the semiconductor manufacturing system is faulty, initiating a corrective action for the faulty component over the internet.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. One embodiment of the present inventions is directed to sputter depositing a metal layer by biasing a sputter target with pulsed power in which the power applied to the target alternates between low and high levels. The high levels are, in one embodiment, sufficiently high to maintain a plasma for ionizing deposition material. The low levels are, in one embodiment, sufficiently low such that the power applied to the target during the high and low levels is, on average, low enough to facilitate deposition of thin layers if desired.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. One embodiment of the present inventions is directed to sputter depositing a metal layer by biasing a sputter target with pulsed power in which the power applied to the target alternates between low and high levels. The high levels are, in one embodiment, sufficiently high to maintain a plasma for ionizing deposition material. The low levels are, in one embodiment, sufficiently low such that the power applied to the target during the high and low levels is, on average, low enough to facilitate deposition of thin layers if desired.

Abstract: Embodiments of the invention provide a processing apparatus having a lower reactor portion, an adjustable reactor wall portion attached to an upper portion of the lower reactor portion, the adjustable reactor wall portion being configured for selective linear expansion and contraction, and a source assembly positioned above the adjustable reactor wall portion. The cooperative operation of the source, adjustable wall, and the lower reactor creates a processing apparatus wherein the throw distance may be varied without disassembly of the reactor.

Abstract: Embodiments of the present invention generally relate to processes of making an improved salicide-gate. One embodiment of a method for forming a feature on a substrate comprises forming a gate structure on a substrate; forming spacers by the sidewalls of the gate; and depositing a relatively thin metal film, such as cobalt or titanium, over the gate at a high temperature.

Abstract: A physical vapor deposition apparatus is provided with at least one workpiece processing chamber and a programmable control device for controlling process variables within the processing chamber. The control device is programmed to vary the power to an aluminum sputtering target during deposition of aluminum layers. By controlling the applied power, the rate of deposition of the aluminum is varied in a manner which reduces or avoids the creation of voids during the filling of high aspect ratio features.

Abstract: A method of forming solder bumps on a semiconductor wafer utilizing a low temperature biasable electrostatic chuck. In particular, the method comprises the steps of providing at least one bond pad on the semiconductor wafer, forming a barrier layer over the bond pad, and forming the solder bumps upon the at least one bond pad. By controlling the temperature and biasing of the electrostatic chuck, the barrier layer, such as nickel vanadium, exhibits a low tensile or compressive stress.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: The present invention generally relates to an improved salicide-gate and process of making an improved salicide-gate. One embodiment of the process comprises forming a gate structure on a substrate; forming spacers by the sidewalls of the gate; and depositing a relatively thin metal film, such as cobalt or titanium, over the gate at a high temperatures.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: Methods for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: The present disclosure pertains to our discovery that a specialized set of process variables will enable the performance of second layer aluminum metallization of multi-layered semiconductor structures within a single processing chamber, without the need for deposition of a nucleation layer of aluminum, and without the need for a reflow step to fill voids formed during metallization. In general, the improved method of the invention includes the following steps: (a) sputter etching the patterned dielectric surface; (b) depositing at least one continuous wetting layer of titanium over the patterned dielectric surface using ion sputter deposition, the wetting layer having a thickness within the range of about 25 Å to about 200 Å on the sidewall of a contact via formed in the substrate; and (c) depositing a layer of aluminum over the titanium wetting layer using traditional sputter deposition at a substrate temperature within the range of about 380° C. to about 500° C.