Patents by Inventor Ding Ding

Ding Ding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170206481
    Abstract: A predictive engine on a computer environment comprising a shared pool of configurable computing resources is executed to perform a predictive analysis on data pipelined into the computer environment, the data received from a plurality of sources and in a plurality of different formats, the predictive engine generating a network level cost information based on the predictive analysis on a dynamic and continuous basis. Asynchronous communication comprising the network level cost information from the predictive engine is received and a set of candidate nodes for order fulfillment is generated based on the network level cost information and a defined distance between the set of candidate nodes and a target destination. An optimization engine on the computer environment is invoked that filters the set of candidate nodes. A number of fulfillment nodes that meet one or more of a constraint and preconfigured rule is output.
    Type: Application
    Filed: May 13, 2016
    Publication date: July 20, 2017
    Inventors: Sanjay E. Cheeran, Ajay A. Deshpande, Saurabh Gupta, Arun Hampapur, Steve Igrejas, Ali Koc, Pradyumnha G. Kowlani, Yingjie Li, Ding Ding Lin, Xuan Liu, Christopher S. Milite, Brian L. Quanz, Vadiraja S. Ramamurthy, Sachin Sethiya, Chek Keong Tan, Dahai Xing, Michael Yesudas, Xiaobo Zheng
  • Publication number: 20170206589
    Abstract: A method, system and computer program product for managing an order in an Omni-channel order fulfillment system is disclosed. A stock-keeping unit (SKU) node level cost is predicted for a plurality of SKUs. The order is received containing one or more SKUs. A candidate list of fulfillment nodes is determined for fulfilling each of the one or more SKUs in the order using the predicted SKU node level cost and a fulfillment node-destination shipping distance. One or more fulfillment nodes are selected from the candidate list, and the order is fulfilled using the selected one or more fulfillment nodes.
    Type: Application
    Filed: February 8, 2016
    Publication date: July 20, 2017
    Inventors: Ajay A. Deshpande, Saurabh Gupta, Arun Hampapur, Alan J. King, Ali Koc, Pradyumnha G. Kowlani, Yingjie Li, Ding Ding Lin, Xuan Liu, Christopher Milite, Brian L. Quanz, Chek Keong Tan, Dahai Xing, Xiao Bo Zheng
  • Patent number: 9661608
    Abstract: Provided in an embodiment of the present invention are a broadcast service resource allocation method, a resource management center and an MME, the method includes: a network side receiving a tracking area update (TAU) request message reported by a user equipment (UE) after the UE moves, and determining according to the TAU request message that a first multimedia broadcast multicast service over a single frequency network (MBSFN) to which the UE belongs before the UE moves is different from a second MBSFN to which the UE belongs after the UE moves; the network side adjusting broadcasts within the first MBSFN and the second MBSFN respectively according to a service subscribed or being received by the UE.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: May 23, 2017
    Assignee: ZTE Corporation
    Inventors: Ding Ding, Zijiang Ma, Qun Li, Zhi Zhang, Gaopeng Du, Shouyong Zhang
  • Patent number: 9634182
    Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: April 25, 2017
    Assignee: SOITEC
    Inventors: Jean-Philippe Debray, Chantal Arena, Heather McFavilen, Ding Ding, Li Huang
  • Patent number: 9609534
    Abstract: Provided are a method, device and UE for sending indication information, and a method and device for receiving an MBMS. The method for sending indication information includes: UE determining that the UE has left one or more MBSFN areas which can carry a predetermined MBMS; the UE sending indication information to a network side. The method for receiving MBMS includes: UE receiving a specified MBMS which is carried in one or more MBSFN area to which a source cell where the UE is currently located belongs; after the UE performs cell reselection and resides in a target cell, in the case that one or more MBSFN areas to which the target cell belongs are different from one or more MBSFN areas to which the source cell belongs, the UE acquiring a condition of one or more MBMSs which are carried in the one or more MBSFN areas to which the target cell belongs; and the UE continuing receiving the specified MBMS in the target cell according to the acquired MBMS condition.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: March 28, 2017
    Assignee: ZTE CORPORATION
    Inventors: Zijiang Ma, Ding Ding, Hongjun Liu
  • Publication number: 20160126410
    Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
    Type: Application
    Filed: January 8, 2016
    Publication date: May 5, 2016
    Inventors: Jean-Philippe Debray, Chantal Arena, Heather McFavilen, Ding Ding, Li Huang
  • Patent number: 9320061
    Abstract: Disclosed are a broadband digital trunking service implementation method and a trunking scheduling management center. The trunking scheduling management center receives a trunking call establishment request, and sends a network side a trunking bearer establishment request carrying call information and a transmission bearer address according to the trunking call establishment request.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: April 19, 2016
    Assignee: ZTE Corporation
    Inventors: Qun Li, Ding Ding, Zijiang Ma, Shouyong Zhang, Gaopeng Du, Zhi Zhang
  • Patent number: 9246057
    Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: January 26, 2016
    Assignee: SOITEC
    Inventors: Jean-Philippe Debray, Chantal Arena, Heather McFavilen, Ding Ding, Li Huang
  • Publication number: 20150350098
    Abstract: A method for implementing the application for speaking right of a Long Term Evolution (LTE)-based broadband trunking system, a Mobility Management Entity (MME), a network subsystem, a broadband wireless access subsystem and the LTE-based broadband trunking system are disclosed. The method includes: the broadband wireless access subsystem sending a trunking speaking right update request to the network subsystem, receiving the trunking speaking right update accept message returned by the network subsystem, and sending the trunking speaking right update accept message to a speaking right seizing terminal; and the broadband wireless access subsystem receiving the speaking right occupation prompt message sent by the network subsystem, and sending the trunking speaking right occupation prompt message and updated configuration information via a multicast control channel of an enhanced Multimedia Broadcast Multicast Service (eMBMS).
    Type: Application
    Filed: September 17, 2013
    Publication date: December 3, 2015
    Inventors: Gaopeng Du, Qun Li, Zijiang Ma, Shouyong Zhang, Ding Ding
  • Publication number: 20150282199
    Abstract: A method for implementing speaking right seizing of an LTE-based broadband cluster system, an MME, a network subsystem, a broadband wireless access subsystem and the LTE-based broadband cluster system are disclosed.
    Type: Application
    Filed: September 17, 2013
    Publication date: October 1, 2015
    Applicant: ZTE CORPORATION
    Inventors: Gaopeng Du, Qun Li, Zijiang Ma, Shouyong Zhang, Ding Ding
  • Publication number: 20150128860
    Abstract: Deposition chambers (102) for use with deposition systems (100) include a chamber wall (112) comprising a transparent material. The chamber wall may include an outer metrology window (122) surface extending from and at least partially circumscribed by an outer major surface of the wall, and an inner metrology window surface extending from and at least partially circumscribed by an inner major surface of the wall. The window surfaces may be oriented at angles to the major surfaces. Deposition systems include such chambers. Methods include the formation of such deposition chambers. The depositions systems and chambers may be used to perform in-situ metrology.
    Type: Application
    Filed: May 24, 2013
    Publication date: May 14, 2015
    Applicant: Soitec
    Inventors: Claudio Canizares, Ding Ding
  • Publication number: 20150098383
    Abstract: Provided in an embodiment of the present invention are a broadcast service resource allocation method, a resource management center and an MME, the method includes: a network side receiving a tracking area update (TAU) request message reported by a user equipment (UE) after the UE moves, and determining according to the TAU request message that a first multimedia broadcast multicast service over a single frequency network (MBSFN) to which the UE belongs before the UE moves is different from a second MBSFN to which the UE belongs after the UE moves; the network side adjusting broadcasts within the first MBSFN and the second MBSFN respectively according to a service subscribed or being received by the UE.
    Type: Application
    Filed: May 24, 2013
    Publication date: April 9, 2015
    Inventors: Ding Ding, Zijiang Ma, Qun Li, Zhi Zhang, Gaopeng Du, Shouyong Zhang
  • Publication number: 20150087298
    Abstract: Disclosed are a broadband digital trunking service implementation method and a trunking scheduling management centre. The trunking scheduling management centre receives a trunking call establishment request, and sends a network side a trunking bearer establishment request carrying call information and a transmission bearer address according to the trunking call establishment request.
    Type: Application
    Filed: May 6, 2013
    Publication date: March 26, 2015
    Applicant: ZTE Corporation
    Inventors: Qun Li, Ding Ding, Zijiang Ma, Shouyong Zhang, Gaopeng Du, Zhi Zhang
  • Publication number: 20140264408
    Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Soitec
    Inventors: Jean-Philippe Debray, Chantal Arena, Heather McFavilen, Ding Ding, Li Huang
  • Publication number: 20140251425
    Abstract: To improve the efficiency of heterostructure silicon photovoltaic devices, II-VI wide bandgap semiconductor layers can replace the TCO/doped amorphous silicon/intrinsic amorphous silicon layers on the front side or on both sides of the silicon bulk layer. For example, photovoltaic devices are described containing a first contact electrode; a first doped II-VI semiconductor layer disposed over the first contact electrode; a doped crystalline silicon layer disposed over the first doped II-VI semiconductor layer; and a second contact electrode disposed over the doped silicon layer, where one of the doped crystalline silicon layer and the first doped II-VI semiconductor layer is n-doped N and the other is p-doped.
    Type: Application
    Filed: September 20, 2012
    Publication date: September 11, 2014
    Applicant: Arizona Board of Regents, A Body Corporate of the State of Arizona
    Inventors: Yong-hang Zhang, Jing-Jing Li, Ding Ding
  • Publication number: 20140140237
    Abstract: Provided are a method, device and UE for sending indication information, and a method and device for receiving an MBMS. The method for sending indication information includes: UE determining that the UE has left one or more MBSFN areas which can carry a predetermined MBMS; the UE sending indication information to a network side. The method for receiving MBMS includes: UE receiving a specified MBMS which is carried in one or more MBSFN area to which a source cell where the UE is currently located belongs; after the UE performs cell reselection and resides in a target cell, in the case that one or more MBSFN areas to which the target cell belongs are different from one or more MBSFN areas to which the source cell belongs, the UE acquiring a condition of one or more MBMSs which are carried in the one or more MBSFN areas to which the target cell belongs; and the UE continuing receiving the specified MBMS in the target cell according to the acquired MBMS condition.
    Type: Application
    Filed: January 27, 2014
    Publication date: May 22, 2014
    Applicant: ZTE Corporation
    Inventors: Zijiang Ma, Ding Ding, Hongjun Liu
  • Publication number: 20140067975
    Abstract: A message processing method and system. According to embodiments of the present invention, the preference of a user for messages may be determined based on actions of the user regarding those messages. The message is analyzed to determine one or more categories to which content of the messages belongs to. Thus, a matching degree between the user and a corresponding category may be determined or adjusted according to the preference of the user for the messages. Such a matching degree may be then used for filtering an incoming message. According to embodiments of the present invention, for each specific user, the information that a user is not interested in may be filtered in a more accurate and adaptive manner.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 6, 2014
    Applicant: International Business Machines Corporation
    Inventors: Hong Wei Ding, Jin Dong, Ding Ding Lin, Wei Wang, Xiao Qing Wang, Yong Qing Xue
  • Patent number: 8350208
    Abstract: Two-terminal multi junction photodetectors and focal plane arrays for multi-color detection or imaging acquisition can be formed by connecting photodiodes with different bandgaps or wavelengths, through tunnel diodes, in series with the same polarization. Under reverse bias in the dark, the total current going through such multi junction photodetectors is dictated by the smallest reverse saturation current of the photodiodes. When in operating mode, a set of light sources with different wavelengths corresponding to each individual photodiode can be used to optically bias all the photodiodes except the detecting photodiode Under illumination, all other photodiodes work in the photovoltaic mode and have much higher maximum possible reverse currents than the detecting photodiode. As a result, the total current of the multi junction photodetector is dictated by the detecting photodiode.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: January 8, 2013
    Assignee: Arizona Board of Regents, a body corporate of the State of Arizona, acting for and on behalf of Arizona State University
    Inventors: Yong-Hang Zhang, Ding Ding, Elizabeth Steenbergen
  • Patent number: D673147
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: December 25, 2012
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Chiang-Kuo Tang, Ding-Ding Zhang, Ya-Ming Guan
  • Patent number: D676997
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: February 26, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Chiang-Kuo Tang, Ding-Ding Zhang, Li-Dong Zhang