Patents by Inventor Ding Hai

Ding Hai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated capacitors in package-level structures, processes of making same, and systems containing same
    Patent number: 7989916
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: August 2, 2011
    Assignee: Intel Corporation
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Integrated capacitors in package-level structures, processes of making same, and systems containing same
    Publication number: 20100059858
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Application
    Filed: November 10, 2009
    Publication date: March 11, 2010
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Integrated capacitors in package-level structures, processes of making same, and systems containing same
    Patent number: 7670919
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: March 2, 2010
    Assignee: Intel Corporation
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Integrated capacitors in package-level structures, processes of making same, and systems containing same
    Publication number: 20070158818
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Application
    Filed: December 30, 2005
    Publication date: July 12, 2007
    Inventors: John Tang, Xiang Zeng, Jiangqi He, Ding Hai