Patents by Inventor Ding Wu
Ding Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12157667Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: GrantFiled: April 13, 2022Date of Patent: December 3, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jui-Chun Weng, Lavanya Sanagavarapu, Ching-Hsiang Hu, Wei-Ding Wu, Shyh-Wei Cheng, Ji-Hong Chiang, Hsin-Yu Chen, Hsi-Cheng Hsu
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Patent number: 12148236Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.Type: GrantFiled: August 10, 2023Date of Patent: November 19, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: You-Cheng Jhang, Han-Zong Pan, Wei-Ding Wu, Jiu-Chun Weng, Hsin-Yu Chen, Cheng-San Chou, Chin-Min Lin
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Publication number: 20240361609Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: July 11, 2024Publication date: October 31, 2024Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Yen Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Patent number: 12092839Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: GrantFiled: July 14, 2023Date of Patent: September 17, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
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Patent number: 11861928Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.Type: GrantFiled: November 23, 2022Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: You-Cheng Jhang, Han-Zong Pan, Wei-Ding Wu, Jiu-Chun Weng, Hsin-Yu Chen, Cheng-San Chou, Chin-Min Lin
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Publication number: 20230400699Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 8, 2023Publication date: December 14, 2023Inventors: Hsin-Yu CHEN, Yen-Chiang LIU, June-Jie CHIOU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, LAVANYA SANAGAVARAPU, Han-Zong PAN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Hsi-Cheng HSU
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Publication number: 20230401885Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.Type: ApplicationFiled: August 10, 2023Publication date: December 14, 2023Inventors: You-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
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Publication number: 20230359056Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: July 14, 2023Publication date: November 9, 2023Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, JI-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Patent number: 11799203Abstract: A modified-material-based high-precision combined antenna for satellite navigation and communications includes a high-frequency satellite navigation antenna metal radiating surface, a low-frequency satellite navigation antenna metal radiating surface, a WIFI/Bluetooth antenna metal radiating surface, a PCB, a shielding metal cavity and an injection molded modified-material-based substrate. The low-frequency satellite navigation antenna metal radiating surface is located between the high-frequency satellite navigation antenna metal radiating surface and the PCB. The WIFI/Bluetooth antenna metal radiating surface is located on a side of the low-frequency satellite navigation antenna metal radiating surface. The injection molded modified-material-based substrate is made of polyphenyl ether doped with a modified material, and the modified material has a relative permittivity of 2.65 and a density of 1.06 g/cm3.Type: GrantFiled: December 24, 2019Date of Patent: October 24, 2023Assignee: SHANGHAI HUACE NAVIGATION TECHNOLOGY LTD.Inventors: Ding Wu, Bo Lv, Wentao Zhong
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Patent number: 11782284Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.Type: GrantFiled: August 8, 2022Date of Patent: October 10, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Patent number: 11726342Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: GrantFiled: August 4, 2022Date of Patent: August 15, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
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Publication number: 20230092567Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.Type: ApplicationFiled: November 23, 2022Publication date: March 23, 2023Inventors: You-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
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Publication number: 20220382069Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Inventors: Hsin-Yu CHEN, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Patent number: 11514707Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.Type: GrantFiled: May 7, 2020Date of Patent: November 29, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: You-Cheng Jhang, Han-Zong Pan, Wei-Ding Wu, Jui-Chun Weng, Hsin-Yu Chen, Cheng-San Chou, Chin-Min Lin
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Publication number: 20220373815Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 4, 2022Publication date: November 24, 2022Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Publication number: 20220348454Abstract: The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.Type: ApplicationFiled: June 29, 2022Publication date: November 3, 2022Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
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Patent number: 11454820Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.Type: GrantFiled: October 17, 2019Date of Patent: September 27, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Patent number: 11448891Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: GrantFiled: October 17, 2019Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen-Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
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Patent number: 11407636Abstract: The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.Type: GrantFiled: September 5, 2018Date of Patent: August 9, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
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Publication number: 20220242724Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: ApplicationFiled: April 13, 2022Publication date: August 4, 2022Inventors: Jui-Chun WENG, Lavanya SANAGAVARAPU, Ching-Hsiang HU, Wei-Ding WU, Shyh-Wei CHENG, Ji-Hong CHIANG, Hsin-Yu CHEN, Hsi-Cheng HSU