Patents by Inventor Ding Y. S. Day

Ding Y. S. Day has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5127984
    Abstract: A method for thinning a Gallium Arsenide (GaAs) layer on the backside of a wafer substrate is provided. The method involves spraying an etchant solution including NH.sub.4 OH and H.sub.2 O.sub.2, preferably in a 1:4 ratio, onto the GaAs layer as the wafer is rotated at approximately 2000 rpm. The etchant is sprayed through a plurality of spray nozzles. The process is capable of thinning a GaAs layer by about 500 .mu.m in approximately 14 to 18 minutes, depending on the etchant temperature and composition.
    Type: Grant
    Filed: May 2, 1991
    Date of Patent: July 7, 1992
    Assignee: Avantek, Inc.
    Inventors: Chang-Hwang Hua, Ding Y. S. Day