Patents by Inventor Ding-Yeong Wang
Ding-Yeong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10725126Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.Type: GrantFiled: December 30, 2016Date of Patent: July 28, 2020Assignee: Industrial Technology Research InstituteInventors: Hsin-Han Lee, Yu-Sheng Chen, Ding-Yeong Wang, Yu-Chen Hsin
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Patent number: 10090033Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.Type: GrantFiled: July 25, 2017Date of Patent: October 2, 2018Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Duan-Lee Tang, Yu-Sheng Chen, Ding-Yeong Wang
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Publication number: 20180102155Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.Type: ApplicationFiled: July 25, 2017Publication date: April 12, 2018Inventors: Duan-Lee Tang, Yu-Sheng Chen, Ding-Yeong Wang
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Publication number: 20180067175Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.Type: ApplicationFiled: December 30, 2016Publication date: March 8, 2018Applicant: Industrial Technology Research InstituteInventors: Hsin-Han Lee, Yu-Sheng Chen, Ding-Yeong Wang, Yu-Chen Hsin
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Patent number: 9810748Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.Type: GrantFiled: December 11, 2015Date of Patent: November 7, 2017Assignee: Industrial Technology Research InstituteInventors: Keng-Ming Kuo, Ding-Yeong Wang
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Publication number: 20160291097Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.Type: ApplicationFiled: December 11, 2015Publication date: October 6, 2016Inventors: Keng-Ming Kuo, Ding-Yeong Wang
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Patent number: 9207290Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.Type: GrantFiled: December 28, 2012Date of Patent: December 8, 2015Assignee: Industrial Technology Research InstituteInventors: Keng-Ming Kuo, Ding-Yeong Wang, Yung-Hung Wang
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Patent number: 9069033Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: GrantFiled: June 2, 2013Date of Patent: June 30, 2015Assignee: Industrial Technology Research InstituteInventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Publication number: 20140292312Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: ApplicationFiled: June 2, 2013Publication date: October 2, 2014Inventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Patent number: 8816683Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.Type: GrantFiled: July 13, 2012Date of Patent: August 26, 2014Assignee: Industrial Technology Research InstituteInventors: Ding-Yeong Wang, Young-Shying Chen, Keng-Ming Kuo
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Publication number: 20140111195Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.Type: ApplicationFiled: December 28, 2012Publication date: April 24, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Keng-Ming KUO, Ding-Yeong WANG, Yung-Hung WANG
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Publication number: 20130229175Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.Type: ApplicationFiled: July 13, 2012Publication date: September 5, 2013Inventors: Ding-Yeong Wang, Young-Shying Chen, Keng-Ming Kuo
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Publication number: 20130207209Abstract: A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.Type: ApplicationFiled: April 16, 2012Publication date: August 15, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yung-Hung Wang, Kuei-Hung Shen, Ding-Yeong Wang, Shan-Yi Yang
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Patent number: 8026562Abstract: A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.Type: GrantFiled: September 16, 2010Date of Patent: September 27, 2011Assignee: Industrial Technology Research InstituteInventors: Wei-Chuan Chen, Cheng-Tyng Yen, Ding-Yeong Wang
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Patent number: 7872904Abstract: A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.Type: GrantFiled: April 23, 2008Date of Patent: January 18, 2011Assignee: Industrial Technology Research InstituteInventors: Ding-Yeong Wang, Yuan-Jen Lee, Chien-Chung Hung
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Publication number: 20110001203Abstract: A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.Type: ApplicationFiled: September 16, 2010Publication date: January 6, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Chuan Chen, Cheng-Tyng Yen, Ding-Yeong Wang
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Patent number: 7829964Abstract: A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.Type: GrantFiled: March 5, 2009Date of Patent: November 9, 2010Assignee: Industrial Technology Research InstituteInventors: Wei-Chuan Chen, Cheng-Tyng Yen, Ding-Yeong Wang
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Publication number: 20100109109Abstract: A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.Type: ApplicationFiled: March 5, 2009Publication date: May 6, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Chuan Chen, Cheng-Tyng Yen, Ding-Yeong Wang
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Patent number: 7646635Abstract: A data reading circuit of a magnetic memory applicable for reading data of a magnetic memory includes a first transistor, a second transistor connected to the first transistor in series, a third transistor, a fourth transistor connected to the third transistor in series, a first transmission gate electrically connected to the first transistor, a second transmission gate electrically connected to the first and third transistors, a comparison circuit having two input ends respectively connected to the first transistor, and a storage capacitor having an end electrically connected to the first transistor and the other end connected to a power end.Type: GrantFiled: December 28, 2007Date of Patent: January 12, 2010Assignee: Industrial Technology Research InstituteInventors: Young-Shying Chen, Ding-Yeong Wang
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Publication number: 20090316472Abstract: A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.Type: ApplicationFiled: April 23, 2008Publication date: December 24, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ding-Yeong Wang, Yuan-Jen Lee, Chien-Chung Hung