Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.

Abstract: A monitor system for monitoring a status of a material in an extruder device is provided. The monitor system includes: a heater, a thermal sensor, a hardness measuring module and a material status monitor. The heater is for heating the material in a material delivering part of the extruder device; the thermal sensor is for measuring a thermal variation of the material; the hardness measuring module is for measuring a first hardness value of the material; and the material status monitor is for determining the status of the material according to the thermal variation and the first hardness value.

Abstract: A secure extruder device includes a material delivery channel, a nozzle part, a parameter part, a thermal-control part, a material auto-destruction module and/or a parameter auto-destruction module. The material delivery channel is assembled with an extrusion part. The nozzle part is connected to the material delivery channel for ejecting material in the material delivery channel out. The parameter part provides parameters for a printing task to a microcontroller. The thermal-control part heats the nozzle part according to the parameters for the printing task. The material auto-destruction module destroys the material delivery channel after the printing task is completed. The parameter auto-destruction module destroys the parameters for the printing task after the printing task is completed. The microcontroller controls the extrusion part based on the parameters for the printing task so that the extrusion part delivers the material disposed inside the material delivery channel to the nozzle part.

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.

Abstract: A solar cell with lightweight support structure and a method of manufacturing the same are provided. The solar cell includes: a composite substrate; a photoelectric conversion structure disposed on the composite substrate, and including a light receiving side and a back side which is opposite the light receiving side; a front electrode formed on the light receiving side; and a back electrode formed on the back side, where the composite substrate includes an optical reflective layer which is connected with the back side of the photoelectric conversion structure; and where the photoelectric conversion structure includes at least one Group III-V compound semiconductor layer.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A secure extruder device includes a material delivery channel, a nozzle part, a parameter part, a thermal-control part, a material auto-destruction module and/or a parameter auto-destruction module. The material delivery channel is assembled with an extrusion part. The nozzle part is connected to the material delivery channel for ejecting material in the material delivery channel out. The parameter part provides parameters for a printing task to a microcontroller. The thermal-control part heats the nozzle part according to the parameters for the printing task. The material auto-destruction module destroys the material delivery channel after the printing task is completed. The parameter auto-destruction module destroys the parameters for the printing task after the printing task is completed. The microcontroller controls the extrusion part based on the parameters for the printing task so that the extrusion part delivers the material disposed inside the material delivery channel to the nozzle part.

Abstract: A light-emitting device comprises a plurality of light-emitting pillars separated from each other by a space, wherein each of the plurality of light-emitting pillars comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting pillars; a top electrode formed on the reflective layer and the plurality of light-emitting pillars; and a fill material formed between the reflective layer and the top electrode.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A light-emitting device comprises a plurality of light-emitting pillars separated from each other by a space, wherein each of the plurality of light-emitting pillars comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting pillars; a top electrode formed on the reflective layer and the plurality of light-emitting pillars; and a fill material formed between the reflective layer and the top electrode.

Abstract: A light-emitting device comprises a substrate; a plurality of light-emitting diodes formed on the substrate, wherein each of the plurality of light-emitting diodes comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting diodes; and a top electrode formed on the reflective layer and the plurality of light-emitting diodes.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A compact optical system is provided. The system includes a first optical module, a first substrate, a second optical module, and a second substrate. The first optical module is utilized to modulate a laser beam. The first substrate supports the first optical module, and the first substrate defines a first optical via such that the laser beam can pass through the first substrate through the first optical via. The second optical module receives the laser beam from the first optical via for modulating the laser beam. The second substrate is disposed parallel to the first substrate and away from the first substrate with a first predetermined distance and utilized to support the second optical module. An ultrafast laser thereof is further provided.

Abstract: A compact optical system is provided. The system includes a first optical module, a first substrate, a second optical module, and a second substrate. The first optical module is utilized to modulate a laser beam. The first substrate supports the first optical module, and the first substrate defines a first optical via such that the laser beam can pass through the first substrate through the first optical via. The second optical module receives the laser beam from the first optical via for modulating the laser beam. The second substrate is disposed parallel to the first substrate and away from the first substrate with a first predetermined distance and utilized to support the second optical module. An ultrafast laser thereof is further provided.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first and a second metal-oxide-semiconductor (MOS) device. The step of forming the first MOS device includes forming a first silicon germanium layer over the first region of the semiconductor substrate; forming a silicon layer over the first silicon germanium layer; forming a first gate dielectric layer over the silicon layer; and patterning the first gate dielectric layer to form a first gate dielectric. The step of forming the second MOS device includes forming a second silicon germanium layer over the second region of the semiconductor substrate; forming a second gate dielectric layer over the second silicon germanium layer with no substantially pure silicon layer therebetween; and patterning the second gate dielectric layer to form a second gate dielectric.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first and a second metal-oxide-semiconductor (MOS) device. The step of forming the first MOS device includes forming a first silicon germanium layer over the first region of the semiconductor substrate; forming a silicon layer over the first silicon germanium layer; forming a first gate dielectric layer over the silicon layer; and patterning the first gate dielectric layer to form a first gate dielectric. The step of forming the second MOS device includes forming a second silicon germanium layer over the second region of the semiconductor substrate; forming a second gate dielectric layer over the second silicon germanium layer with no substantially pure silicon layer therebetween; and patterning the second gate dielectric layer to form a second gate dielectric.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A light-emitting device comprises a substrate; a plurality of light-emitting diodes formed on the substrate, wherein each of the plurality of light-emitting diodes comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting diodes; and a top electrode formed on the reflective layer and the plurality of light-emitting diodes.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first and a second metal-oxide-semiconductor (MOS) device. The step of forming the first MOS device includes forming a first silicon germanium layer over the first region of the semiconductor substrate; forming a silicon layer over the first silicon germanium layer; forming a first gate dielectric layer over the silicon layer; and patterning the first gate dielectric layer to form a first gate dielectric. The step of forming the second MOS device includes forming a second silicon germanium layer over the second region of the semiconductor substrate; forming a second gate dielectric layer over the second silicon germanium layer with no substantially pure silicon layer therebetween; and patterning the second gate dielectric layer to form a second gate dielectric.