Patents by Inventor Dingding REN

Dingding REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lasers or LEDs based on nanowires grown on graphene type substrates
    Patent number: 11515688
    Abstract: A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.
    Type: Grant
    Filed: February 5, 2018
    Date of Patent: November 29, 2022
    Assignee: Norwegian University of Science and Technology
    Inventors: Bjorn Ove Myking Fimland, Helge Weman, Dingding Ren
  • Process for growing nanowires or nanopyramids on graphitic substrates
    Patent number: 11450528
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: September 20, 2022
    Assignees: Crayonano As, Norwegian University Of Science And Technology (NTNU)
    Inventors: Dong Chul Kim, Ida Marie Høiaas, Mazid Munshi, Bjørn Ove Fimland, Helge Weman, Dingding Ren, Dasa Dheeraj
  • Nanostructure
    Patent number: 11239391
    Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped ?-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: February 1, 2022
    Assignee: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Bjørn Ove Myking Fimland, Helge Weman, Dingding Ren
  • Process for growing nanowires or nanopyramids on graphitic substrates
    Patent number: 10714337
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: July 14, 2020
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dong Chul Kim, Ida Marie Høiaas, Mazid Munshi, Bjørn Ove Fimland, Helge Weman, Dingding Ren, Dasa Dheeraj
  • NANOSTRUCTURE
    Publication number: 20200161504
    Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped ?-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.
    Type: Application
    Filed: April 10, 2018
    Publication date: May 21, 2020
    Inventors: Bjørn Ove Myking FIMLAND, Helge WEMAN, Dingding REN
  • PROCESS FOR GROWING NANOWIRES OR NANOPYRAMIDS ON GRAPHITIC SUBSTRATES
    Publication number: 20200006051
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ
  • PROCESS FOR GROWING NANOWIRES OR NANOPYRAMIDS ON GRAPHITIC SUBSTRATES
    Publication number: 20180226242
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: August 1, 2016
    Publication date: August 9, 2018
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ