Abstract: A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming a semiconductor layer on the substrate; performing P-type doping on the semiconductor layer to transform the semiconductor layer into an initial mask layer; performing a first patterning treatment on the initial mask layer to form a mask layer having an opening; and performing a second patterning on the substrate by taking the mask layer as a mask and using an etching process. An etching rate of the substrate is greater than an etching rate of the mask layer during the etching process.