Abstract: Provided are a semiconductor structure and a method for manufacturing same. The semiconductor structure includes a target structure, a low dielectric constant material layer disposed on the target structure, and a protective layer disposed on the low dielectric constant material layer. The low dielectric constant material layer and the protective layer are prepared from the same precursor, and the protective layer has a lower carbon content.

Abstract: A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming a semiconductor layer on the substrate; performing P-type doping on the semiconductor layer to transform the semiconductor layer into an initial mask layer; performing a first patterning treatment on the initial mask layer to form a mask layer having an opening; and performing a second patterning on the substrate by taking the mask layer as a mask and using an etching process. An etching rate of the substrate is greater than an etching rate of the mask layer during the etching process.