Abstract: A method and system for purifying a carbon dioxide feed stream in which the carbon dioxide feed stream is cooled and partially condensed to remove water upstream of an adsorber to produce a dry carbon dioxide stream. The dry carbon dioxide stream is further cooled and partially condensed in a carbon dioxide purification unit to form a carbon dioxide product stream. Excess refrigeration duty from the carbon dioxide purification unit is used to cool the carbon dioxide feed stream.

Abstract: A method for capturing carbon dioxide from a carbon dioxide feed stream in which the carbon dioxide feed stream is dehydrated, cooled, and partially condensed. The partially condensed carbon dioxide stream is separated to form the carbon dioxide product stream. The carbon dioxide feed stream is produced by combusting a fuel stream with an oxygen-enriched gas stream with less than 92% purity.

Abstract: A method and apparatus for purifying air via a pre-purification unit (PPU) of an air separation unit (ASU) system can include passing air through a first adsorber of the PPU to purify the air for operation of the ASU system while it is at or below a first pre-selected operational capacity. In response to the operational capacity of the ASU system needing to be increased to a level above the first pre-selected operational capacity threshold, a second adsorber can be brought on-line in parallel with the first adsorber or in series with the first adsorber to provide improved purification capacity to account for the increased demand for purification capacity resulting from the increased operational capacity of the ASU system. This second adsorber can be different from the first adsorber (e.g. different in size, adsorption capacity for impurities within air, and/or configuration, etc.).

Abstract: A method of purifying air via a pre-purification unit (PPU) of an air separation unit (ASU) system having a pre-PPU chiller that is upstream of the PPU to cool compressed air before the compressed air is fed to the PPU can include passing air through an adsorber of the PPU to pass the air through a bed of adsorbent material within a vessel of the adsorber. In response to the pre-PPU chiller being determined to have an issue resulting in the pre-PPU chiller being tripped or requiring the pre-PPU chiller to be taken off-line, continuing to operate the ASU system at a full capacity even though nitrous oxide (N2O) within the air output from the PPU exceeds a first pre-selected threshold and is below a second pre-selected threshold associated with carbon dioxide (CO2) breakthrough. An ASU and a PPU can be designed to implement an embodiment of the method.

Abstract: Disclosed herein are multi-bed rapid cycle pressure swing adsorption (RCPSA) processes for separating O2 from N2 and/or Ar, wherein the process utilizes at least five adsorption beds each comprising a kinetically selective adsorbent for O2 having an O2 adsorption rate (1/s) of at least 0.20 as determined by linear driving force model at 1 atma and 86° F.

Abstract: Disclosed herein are multi-bed rapid cycle pressure swing adsorption (RCPSA) processes for separating O2 from N2 and/or Ar, wherein the process utilizes at least five adsorption beds each comprising a kinetically selective adsorbent for O2 having an O2 adsorption rate (1/s) of at least 0.20 as determined by linear driving force model at 1 atma and 86° F.

Abstract: A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.

Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract: A three-in-one drum includes a drum chamber, a drum skin and pressing rings. A beating tray is vertically and adjustably disposed in the drum chamber and covered with a cushion. The bottom of the beating tray has a microphone vibrator connected to a loudspeaker box. When the adjusting rod is rotated clockwise, the beating tray rises and the cushion is close to the drum skin. The drum skin does not ground when being beaten, this is the mute drum function. An beating trigger connected with an electronic sound source sends electronic signal to perform the electric drum function. The microphone vibrator amplifies the audio frequency signal to perform the audio amplification function. When the adjusting rod is rotated counter clockwise, the beating tray is lowered and the cushion is located away from the drum skin which sounds when being beaten to perform the raw sound drum function.

Abstract: A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.

Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract: This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Abstract: This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Abstract: The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.

Abstract: A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Abstract: A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Abstract: A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.

Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.