Patents by Inventor Dingjun Wu

Dingjun Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200054987
    Abstract: Disclosed herein are multi-bed rapid cycle pressure swing adsorption (RCPSA) processes for separating O2 from N2 and/or Ar, wherein the process utilizes at least five adsorption beds each comprising a kinetically selective adsorbent for O2 having an O2 adsorption rate (1/s) of at least 0.20 as determined by linear driving force model at 1 atma and 86° F.
    Type: Application
    Filed: August 14, 2018
    Publication date: February 20, 2020
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Shubhra Jyoti Bhadra, Roger Dean Whitley, Timothy Christopher Golden, Dingjun Wu, Glenn Paul Wagner
  • Patent number: 9381460
    Abstract: A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: July 5, 2016
    Assignee: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Edward Landis Weist, Jr., Dingjun Wu, Jianguo Xu, Blaine Edward Herb, Bryan Clair Hoke, Jr.
  • Patent number: 9293361
    Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: March 22, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Aaron Scott Lukas
  • Patent number: 9224371
    Abstract: A three-in-one drum includes a drum chamber, a drum skin and pressing rings. A beating tray is vertically and adjustably disposed in the drum chamber and covered with a cushion. The bottom of the beating tray has a microphone vibrator connected to a loudspeaker box. When the adjusting rod is rotated clockwise, the beating tray rises and the cushion is close to the drum skin. The drum skin does not ground when being beaten, this is the mute drum function. An beating trigger connected with an electronic sound source sends electronic signal to perform the electric drum function. The microphone vibrator amplifies the audio frequency signal to perform the audio amplification function. When the adjusting rod is rotated counter clockwise, the beating tray is lowered and the cushion is located away from the drum skin which sounds when being beaten to perform the raw sound drum function.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: December 29, 2015
    Assignee: Tianjin Jinbao Musical Instruments Co., Ltd.
    Inventors: Dingjun Wu, Yongcai Dai, Xiaohu Pei
  • Publication number: 20140373713
    Abstract: A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 25, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Edward Landis Weist, JR., Dingjun Wu, Jianguo Xu, Blaine Edward Herb, Bryan Clair Hoke, JR.
  • Publication number: 20140363950
    Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
    Type: Application
    Filed: July 3, 2014
    Publication date: December 11, 2014
    Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, JR., Aaron Scott Lukas
  • Patent number: 8846522
    Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: September 30, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
  • Patent number: 8399349
    Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: March 19, 2013
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
  • Patent number: 8278222
    Abstract: This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: October 2, 2012
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Dingjun Wu, Eugene Joseph Karwacki, Jr., Anupama Mallikarjunan, Andrew David Johnson
  • Publication number: 20100022095
    Abstract: This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
    Type: Application
    Filed: January 27, 2009
    Publication date: January 28, 2010
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Dingjun Wu, Eugene Joseph Karwacki, JR., Anupama Mallikarjunan, Andrew David Johnson
  • Patent number: 7446078
    Abstract: The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.
    Type: Grant
    Filed: July 9, 2002
    Date of Patent: November 4, 2008
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Chun Christine Dong, Madhukar Bhaskara Rao, Dingjun Wu
  • Patent number: 7371688
    Abstract: A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.
    Type: Grant
    Filed: September 15, 2004
    Date of Patent: May 13, 2008
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Bing Ji, Martin Jay Plishka, Dingjun Wu, Peter Richard Badowski, Eugene Joseph Karwacki, Jr.
  • Patent number: 7357138
    Abstract: A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: April 15, 2008
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Bing Ji, Stephen Andrew Motika, Ronald Martin Pearlstein, Eugene Joseph Karwacki, Jr., Dingjun Wu
  • Publication number: 20080047579
    Abstract: A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.
    Type: Application
    Filed: August 25, 2006
    Publication date: February 28, 2008
    Inventors: Bing Ji, Stephen Andrew Motika, Dingjun Wu, Eugene Joseph Karwacki
  • Publication number: 20080038934
    Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
    Type: Application
    Filed: March 29, 2007
    Publication date: February 14, 2008
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: RAYMOND VRTIS, DINGJUN WU, MARK O'NEILL, MARK BITNER, JEAN VINCENT, EUGENE KARWACKI, AARON LUKAS
  • Patent number: 7267842
    Abstract: A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.
    Type: Grant
    Filed: March 15, 2004
    Date of Patent: September 11, 2007
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Dingjun Wu, Bing Ji, Philip Bruce Henderson, Eugene Joseph Karwacki, Jr.
  • Publication number: 20070117396
    Abstract: This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO2 or SiN surface having TiN thereon is contacted with XeF2 in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF2 can be preformed or formed in situ by reaction between Xe and a fluorine compound.
    Type: Application
    Filed: November 22, 2005
    Publication date: May 24, 2007
    Inventors: Dingjun Wu, Eugene Karwacki
  • Patent number: 7160360
    Abstract: Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.
    Type: Grant
    Filed: December 8, 2003
    Date of Patent: January 9, 2007
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Dingjun Wu, Timothy Christopher Golden, Chun Christine Dong, Paula Jean Battavio
  • Publication number: 20060254613
    Abstract: This invention relates to an improvement in the cleaning of contaminated tool parts having a coating of unwanted residue formed in a semiconductor deposition chamber. In this process, the contaminated parts to be cleaned are removed from the semiconductor deposition chamber and placed in a reaction chamber off-line from the semiconductor reactor deposition chamber, i.e. on off-line gas reaction chamber. The coating of residue on the contaminated parts is removed in an off-line reactor by contacting the contaminated parts with a reactive gas under conditions for converting the residue to a volatile species while in said off-line reactor and then removing the volatile species from said off-line gas reaction chamber.
    Type: Application
    Filed: May 16, 2005
    Publication date: November 16, 2006
    Inventors: Dingjun Wu, Eugene Karwacki, Bing Ji
  • Patent number: 7119032
    Abstract: This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
    Type: Grant
    Filed: August 23, 2004
    Date of Patent: October 10, 2006
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Bing Ji, Stephen Andrew Motika, Dingjun Wu, Eugene Joseph Karwacki, Jr., David Allen Roberts