Abstract: A high dielectric constant (k?40), low leakage current (?10?6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

Abstract: A precursor composition is described, useful for low temperature (<150° C.) vapor deposition of silicon dioxide. The precursor composition includes hexachlorodisilane, water, and nitrogenous catalyst including an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide. Compositions and processes for forming silicon dioxide at a low temperature with alternative chemistries are also described, e.g., a precursor composition of chloroaminosilane and water, or a precursor composition of chlorosilane and ethanolamine, which may be utilized in pulsed chemical vapor deposition or atomic layer deposition processes.

Abstract: A high dielectric constant (k?40), low leakage current (?10?6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.