Patents by Inventor Dinh Lau Chu

Dinh Lau Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High selectivity BPSG:TiSi.sub.2 contact etch process
    Patent number: 5908320
    Abstract: A method for etching through a selected portion of a Borophosphosilicate Glass (BPSG) layer of the silicon wafer layer stack to a Titanium Silicide (TiSi.sub.2) layer in a plasma processing chamber is disclosed. The method includes the step of etching through the BPSG layer using an etchant source gas that includes Ne, CHF.sub.3, CO and C.sub.4 F.sub.8. Additional process parameters are disclosed for obtaining a high BPSG:TiSi.sub.2 selectivity etch with commercially advantageous BPSG etch rates.
    Type: Grant
    Filed: June 26, 1996
    Date of Patent: June 1, 1999
    Assignee: Lam Research Corporation
    Inventors: Dinh Lau Chu, Donna Lee Alterio
  • Methods for etching borophosphosilicate glass
    Patent number: 5904862
    Abstract: A method in a plasma processing chamber for etching through a selected portion of a borophosphosilicate glass (BPSG) layer of a wafer layer stack. The method includes the step of introducing an etchant source gas into the plasma processing chamber, which consists essentially of CO, CHF.sub.3, and C.sub.4 F.sub.8. The method further includes the step of striking a plasma in the plasma processing chamber from the etchant source gas. Additionally, there is included the step of etching at least partially through the BPSG layer with the plasma.
    Type: Grant
    Filed: June 26, 1996
    Date of Patent: May 18, 1999
    Assignee: Lam Research Corporation
    Inventors: Donna Lee Alterio, Dinh Lau Chu