Abstract: A fixture includes a first end plate, a threaded member, a second end plate, and a compression member. The first end plate has a first end plate recess. The threaded member is fixed in the first end plate in extends in a direction opposite the first end plate recess. The second end plate has a second end plate recess facing the first end plate recess and is slidably received on the threaded member. The compression member is arranged on a side of the second end plate opposite the first end plate and is threadedly seated on a male threaded segment of the threaded member to reverse flow a purge fluid through a mixing block compressively fixed between the first end plate and the second end plate. Fixture arrangements, methods of making mixing blocks, mixing blocks, and semiconductor processing systems including mixing blocks are also described.

Abstract: Methods, kits, and assemblies suitable for gas distribution device transportation are disclosed. An exemplary assembly includes a gas distribution device transport assembly comprising a housing comprising a recess to receive a gas distribution device, a clamping plate to secure the gas distribution device to the housing, a valve assembly, and at least one data logger assembly. Also disclosed is a gas distribution device transport kit comprising a kit housing and the gas distribution device transport assembly. An exemplary method includes transporting the gas distribution device transport kit.

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

Abstract: Methods and apparatuses for adjusting a process chamber volume are described. For example, a process chamber, after removing at least a component used to perform a function associated with the process chamber, may be installed with a fixture to adjust a volume of the process chamber. The process chamber with the fixture may reduce the amount of precursor gases and processing time for coating a workpiece. The workpiece, after the coating, may be placed in another process chamber to perform a function associated with the other process chamber.

Abstract: Methods and apparatuses for measuring a flow conductance of a showerhead assembly are described. For example, a showerhead assembly may be seated in a housing. A gas source may be coupled to an intake port of the showerhead assembly and supply gas to the showerhead assembly via the intake port. A pressure controller may be coupled between the gas source and the showerhead assembly. The pressure controller may measure a flow throughput of the gas that passes through the pressure controller. The pressure controller may maintain the gas being supplied to the showerhead assembly at a first pressure value. A pressure transducer coupled to an exhaust port of the showerhead assembly may measure a second pressure value. A controller may determine a flow conductance of the showerhead assembly based on the flow throughput and the first and second pressure values.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.

Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

Abstract: Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.

Abstract: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.