Patents by Inventor Dinkar V. Singh
Dinkar V. Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8546920Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: GrantFiled: October 15, 2012Date of Patent: October 1, 2013Assignee: International Business Machines CorporationInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Patent number: 8288826Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: GrantFiled: November 7, 2011Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Publication number: 20120049317Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: ApplicationFiled: November 7, 2011Publication date: March 1, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Patent number: 8053373Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: GrantFiled: May 20, 2008Date of Patent: November 8, 2011Assignee: International Business Machines CorporationInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Patent number: 8021956Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.Type: GrantFiled: January 6, 2010Date of Patent: September 20, 2011Assignee: International Business Machines CorporationInventors: Zhibin Ren, Ghavam Shahidi, Dinkar V. Singh, Jeffrey W. Sleight, Xinhui Wang
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Patent number: 7713837Abstract: Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/m2 have also be achieved herein.Type: GrantFiled: May 28, 2008Date of Patent: May 11, 2010Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Kathryn Wilder Guarini, Erin C. Jones, Antonio F. Saavedra, Jr., Leathen Shi, Dinkar V. Singh
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Publication number: 20100105187Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.Type: ApplicationFiled: January 6, 2010Publication date: April 29, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Zhibin Ren, Ghavam Shahidi, Dinkar V. Singh, Jeffrey W. Sleight, Xinhui Wang
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Patent number: 7659583Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.Type: GrantFiled: August 15, 2007Date of Patent: February 9, 2010Assignee: International Business Machines CorporationInventors: Zhibin Ren, Ghavam Shahidi, Dinkar V. Singh, Jeffrey W. Sleight, Xinhui Wang
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Patent number: 7566631Abstract: Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/m2 have also be achieved herein.Type: GrantFiled: April 26, 2006Date of Patent: July 28, 2009Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Kathryn Wilder Guarini, Erin C. Jones, Antonio F. Saavedra, Jr., Leathen Shi, Dinkar V. Singh
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Publication number: 20090045462Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.Type: ApplicationFiled: August 15, 2007Publication date: February 19, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Zhibin Ren, Ghavam Shahidi, Dinkar V. Singh, Jeffrey W. Sleight, Xinhui Wang
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Publication number: 20080227270Abstract: Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/m2 have also be achieved herein.Type: ApplicationFiled: May 28, 2008Publication date: September 18, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kevin K. Chan, Kathryn Wilder Guarini, Erin C. Jones, Antonio F. Saavedra, Leathen Shi, Dinkar V. Singh
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Publication number: 20080224256Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness.Type: ApplicationFiled: May 20, 2008Publication date: September 18, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Patent number: 7396776Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: GrantFiled: July 10, 2006Date of Patent: July 8, 2008Assignee: International Business Machines CorporationInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Publication number: 20080014740Abstract: A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.Type: ApplicationFiled: July 10, 2006Publication date: January 17, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony I. Chou, Toshiharu Furukawa, Wilfried Haensch, Zhibin Ren, Dinkar V. Singh, Jeffrey W. Sleight
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Patent number: 6911375Abstract: Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.Type: GrantFiled: June 2, 2003Date of Patent: June 28, 2005Assignee: International Business Machines CorporationInventors: Kathryn W. Guarini, Louis L. Hsu, Leathen Shi, Dinkar V. Singh, Li-Kong Wang
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Publication number: 20040241958Abstract: Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.Type: ApplicationFiled: June 2, 2003Publication date: December 2, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kathryn W. Guarini, Louis L. Hsu, Leathen Shi, Dinkar V. Singh
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Publication number: 20040126993Abstract: Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of 2500 mJ/m2 have also be achieved herein.Type: ApplicationFiled: December 30, 2002Publication date: July 1, 2004Inventors: Kevin K. Chan, Kathryn Wilder Guarini, Erin C. Jones, Antonio F. Saavedra, Leathen Shi, Dinkar V. Singh