Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Abstract: Embodiments of heat shield assemblies for a processing chamber are provided herein. In some embodiments, a heat shield assembly for a processing chamber includes: a first shield comprising a circular plate; a second shield coupled to the first shield and in a parallel configuration with the first shield, wherein the second shield has an outer diameter greater than an outer diameter of the first shield and the second shield includes a central opening having a diameter smaller than an outer diameter of the first shield; and a third shield coupled to and in a parallel configuration with the second shield, wherein an outer diameter of the third shield is greater than the diameter of the central opening of the second shield.

Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Abstract: Embodiments of coolant guides for use in magnetron assemblies are provided herein. In some embodiments, a coolant guide for use in a magnetron assembly includes: a body having a guide channel extending through the body, wherein an upper opening of the guide channel corresponding with an upper surface of the body has a first size and a lower opening of the guide channel corresponding with a lower surface of the body has a second size greater than the first size, and wherein the body includes a first pair of outer sidewalls that are substantially parallel to each other and a second pair of outer sidewalls that are angled toward each other; and an upper lip extending away from an upper surface of the body.

Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.

Abstract: A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.

Abstract: A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.