Patents by Inventor DINO FERIZOVIC
DINO FERIZOVIC has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11706851Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.Type: GrantFiled: August 26, 2022Date of Patent: July 18, 2023Assignee: Northrop Grumann Systems CorporationInventors: Elizabeth T Kunkee, Dah-Weih Duan, Dino Ferizovic, Chunbo Zhang, Greta S Tsai, Ming-Jong Shiau, Daniel R Scherrer, Martin E Roden
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Publication number: 20220408526Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Inventors: Elizabeth T. Kunkee, Dah-Weih Duan, Dino Ferizovic, Chunbo Zhang, Greta S. Tsai, Ming-Jong Shiau, Daniel R. Scherrer, Martin E. Roden
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Patent number: 11470695Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.Type: GrantFiled: April 28, 2020Date of Patent: October 11, 2022Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Elizabeth T Kunkee, Dah-Weih Duan, Dino Ferizovic, Chunbo Zhang, Greta S Tsai, Ming-Jong Shiau, Daniel R Scherrer, Martn E Roden
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Publication number: 20210391633Abstract: One example includes an integrated circulator system comprising a junction. The junction includes a first port, a second port, and a third port. The junction also includes a substrate material layer on which the first, second, and third ports are provided. The junction also includes a magnetic material layer coupled to the substrate layer. The junction further includes a resonator coupled to the first, second, and third ports to provide signal transmission from the first port to the second port and from the second port to the third port based on a magnetic field provided by the magnetic material layer.Type: ApplicationFiled: May 14, 2021Publication date: December 16, 2021Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Matthew A. Laurent, Dino Ferizovic, Benjamin Poust, Kevin A. Matsui
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Publication number: 20210337638Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.Type: ApplicationFiled: April 28, 2020Publication date: October 28, 2021Inventors: Elizabeth T. Kunkee, Dah-Weih Duan, Dino Ferizovic, Chunbo Zhang, Greta S. Tsai, Ming-Jong Shiau, Daniel R. Scherrer, Martn E. Roden
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Patent number: 10340570Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.Type: GrantFiled: October 26, 2017Date of Patent: July 2, 2019Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Dino Ferizovic, Alexis Zamora, Benjamin Poust
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Publication number: 20190131681Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.Type: ApplicationFiled: October 26, 2017Publication date: May 2, 2019Inventors: Dino Ferizovic, Alexis Zamora, Benjamin Poust
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Patent number: 9774067Abstract: A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.Type: GrantFiled: May 11, 2015Date of Patent: September 26, 2017Assignee: Northrop Grumman Systems CorporationInventors: Benjamin D. Poust, Michael Conrad Battung, Dino Ferizovic, Patty P. Chang-Chien
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Patent number: 9484284Abstract: A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.Type: GrantFiled: March 16, 2016Date of Patent: November 1, 2016Assignees: Northrop Grumman Systems Corporation, General Electric CompanyInventors: Vincent Gambin, Benjamin D. Poust, Dino Ferizovic, Stanton E. Weaver, Gary D. Mandrusiak
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Publication number: 20150244048Abstract: A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.Type: ApplicationFiled: May 11, 2015Publication date: August 27, 2015Inventors: BENJAMIN D. POUST, MICHAEL CONRAD BATTUNG, DINO FERIZOVIC, PATTY P. CHANG-CHIEN