Patents by Inventor Dinos Huang

Dinos Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for intermetal SOG/SOP dielectric planarization
    Patent number: 6037251
    Abstract: A process for intermetal SOG/SOP dielectric planarization without having effect is described. First, a silicon-rich oxide (SRO) layer is formed on a substrate surface. Next, a metal layer and an antireflective coating (ARC) layer are sequentially deposited over the SRO layer. The metal layer and ARC layer are then etched to define metal patterns by the conventional lithography and etching techniques. Next, an Ozone-TEOS (O.sub.3 -TEOS) layer and a SOG layer are then formed over the entire substrate surface. Next, the O.sub.3 -TEOS layer and SOG layer are subjected to etching back treatment to obtain a planar substrate surface which only has a small portion of the O.sub.3 -TEOS layer covered on the substrate surface. The etching back treatment can be PEB, TEB or CMP techniques. Finally, a passivation layer is deposited over the remaining of O.sub.3 -TEOS layer.
    Type: Grant
    Filed: January 6, 1998
    Date of Patent: March 14, 2000
    Assignee: Mosel Vitelic Inc.
    Inventors: Tuby Tu, Chin-Ta Wu, Chen Kuang-Chao, Dinos Huang
  • Method for using oxygen plasma treatment on a dielectric layer
    Patent number: 5883015
    Abstract: The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device.
    Type: Grant
    Filed: July 3, 1997
    Date of Patent: March 16, 1999
    Assignee: Mosel Vitelic Inc.
    Inventors: Kent Liao, Dinos Huang, Tuby Tu, Kuang-Chao Chen, Wen-Doe Su