Abstract: A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.

Abstract: A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.

Abstract: A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.

Abstract: An embedded integrated circuit package-on-package system is provided forming a first integrated circuit package system, forming a second integrated circuit package system, and mounting the second integrated circuit package system over the first integrated circuit package system with the first integrated circuit package system, the second integrated circuit package system, or a combination thereof being an embedded integrated circuit package system or an embedded stacked integrated circuit package system.

Abstract: A mountable integrated circuit package system includes: mounting an integrated circuit die over a package carrier; connecting a first internal interconnect between the integrated circuit die and the package carrier; and forming a package encapsulation over the package carrier and the first internal interconnect, with the integrated circuit die partially exposed within a recess of the package encapsulation.

Abstract: A semiconductor wafer has a plurality of semiconductor die with contact pads. An organic material is deposited in a peripheral region around the semiconductor die. A portion of the organic material is removed to form a plurality of vias. A conductive material is deposited in the vias to form conductive TOV. The conductive TOV can be recessed with respect to a surface of the semiconductor die. Bond wires are formed between the contact pads and conductive TOV. The bond wires can be bridged in multiple sections across the semiconductor die between the conductive TOV and contact pads. An insulating layer is formed over the bond wires and semiconductor die. The semiconductor wafer is singulated through the conductive TOV or organic material between the conductive TOV to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically connected through the bond wires and conductive TOV.

Abstract: A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.

Abstract: An integrated circuit leaded stacked package system includes forming a no-lead integrated circuit package having a mold cap, and attaching a mold cap of an extended-lead integrated circuit package facing the mold cap of the no-lead integrated circuit package.

Abstract: A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

Abstract: A semiconductor device has a base substrate with first and second opposing surfaces. A first etch-resistant conductive layer is formed over the first surface of the base substrate. A second etch-resistant conductive layer is formed over the second surface of the base substrate. A first semiconductor die has bumps formed over contact pads on an active surface of the first die. The first die is mounted over a first surface of the first conductive layer. An encapsulant is deposited over the first die and base substrate. A portion of the base substrate is removed to form electrically isolated base leads between opposing portions of the first and second conductive layers. A second semiconductor die is mounted over the encapsulant and a second surface of the first conductive layer between the base leads. A height of the base leads is greater than a thickness of the second die.

Abstract: A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate and first conductive layer formed over the substrate. A first semiconductor die is mounted over the substrate. A second semiconductor die can be mounted over the first semiconductor die. A leadframe interposer has a base plate and a plurality of base leads extending from the base plate. An etch-resistant conductive layer is formed over a surface of the base plate opposite the base leads. The leadframe is mounted to the substrate over the first semiconductor die. An encapsulant is deposited over the substrate and first semiconductor die. The base plate is removed while retaining the etch-resistant conductive layer and portion of the base plate opposite the base leads to electrically isolate the base leads. An interconnect structure is formed over a surface of the substrate opposite the base leads.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a base structure having a die paddle, an outer lead, and an inner lead between the die paddle and the outer lead, with a pre-plated finish on a base structure system side of the base structure; mounting an integrated circuit device to a side of the die paddle opposite the paddle system side; attaching an interconnect to the integrated circuit device and a side of the inner lead opposite the inner lead system side; applying an encapsulation around the integrated circuit device, the interconnect, and the base structure with the pre-plated finish exposed from the encapsulation; and forming an inward channel in the encapsulation to electrically isolate the inner lead.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead having a lead overhang at an obtuse angle to a lead top side and having a lead ridge protruding from a lead non-horizontal side, the lead overhang having a lead overhang-undercut side at an acute angle to a lead overhang non-horizontal side; forming a lead conductive cap completely covering the lead overhang non-horizontal side and the lead top side; forming a package paddle adjacent the lead; mounting an integrated circuit over the package paddle; and forming an encapsulation over the integrated circuit, the package paddle, and the lead.

Abstract: A semiconductor device has a substrate with a cavity formed through first and second surfaces of the substrate. A conductive TSV is formed through a first semiconductor die, which is mounted in the cavity. The first semiconductor die may extend above the cavity. An encapsulant is deposited over the substrate and a first surface of the first semiconductor die. A portion of the encapsulant is removed from the first surface of the first semiconductor die to expose the conductive TSV. A second semiconductor die is mounted to the first surface of the first semiconductor die. The second semiconductor die is electrically connected to the conductive TSV. An interposer is disposed between the first semiconductor die and second semiconductor die. A third semiconductor die is mounted over a second surface of the first semiconductor die. A heat sink is formed over a surface of the third semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate assembly having a connection path; mounting a base device over the substrate assembly with a mount layer; mounting a stack device over the base device and having a stack die and a stack-organic-material; forming a stack-through-via in the stack-organic-material of the stack device and connected to the stack die and the substrate assembly; and applying a shield layer directly on a planarized surface of the stack-through-via partially exposed from the stack-organic-material.

Abstract: In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.

Abstract: A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads.

Abstract: A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed.

Abstract: A semiconductor device has a substrate with a cavity formed through first and second surfaces of the substrate. A conductive TSV is formed through a first semiconductor die, which is mounted in the cavity. The first semiconductor die may extend above the cavity. An encapsulant is deposited over the substrate and a first surface of the first semiconductor die. A portion of the encapsulant is removed from the first surface of the first semiconductor die to expose the conductive TSV. A second semiconductor die is mounted to the first surface of the first semiconductor die. The second semiconductor die is electrically connected to the conductive TSV. An interposer is disposed between the first semiconductor die and second semiconductor die. A third semiconductor die is mounted over a second surface of the first semiconductor die. A heat sink is formed over a surface of the third semiconductor die.

Abstract: A semiconductor wafer has a plurality of semiconductor die with contact pads. An organic material is deposited in a peripheral region around the semiconductor die. A portion of the organic material is removed to form a plurality of vias. A conductive material is deposited in the vias to form conductive TOV. The conductive TOV can be recessed with respect to a surface of the semiconductor die. Bond wires are formed between the contact pads and conductive TOV. The bond wires can be bridged in multiple sections across the semiconductor die between the conductive TOV and contact pads. An insulating layer is formed over the bond wires and semiconductor die. The semiconductor wafer is singulated through the conductive TOV or organic material between the conductive TOV to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically connected through the bond wires and conductive TOV.