Abstract: A sensor for detecting a target matter includes a chemical sensitive layer that is operable to react when exposed to the target matter and a piezoresistive material coupled to the chemical sensitive layer. The chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer creates an interfacial tension at the interface of the chemical sensitive layer and the piezoresistive material that changes the electrical resistance of the piezoresistive material. However, the chemical sensitive layer is configured such that the reaction of the target matter with the chemical sensitive layer does not affect the bulk properties of the chemical sensitive layer enough to change the electrical resistance of the piezoresistive material. The sensor also includes an electrical circuit coupled to the piezoresistive material that is operable to detect the change in the electrical resistance of the piezoresistive material due to the interfacial tension.

Abstract: This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

Abstract: This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

Abstract: Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70.

Abstract: A multiple film integrated infrared (IR) detector assembly 85 consists of detector films 86, 88, 90 having different IR spectral sensitivities which are deposited on a breadboard IR transmissive but electrically insulating substrate 42. Substrate 42 is deposited on an IR filter layer comprising an HgCdTe film 70. By various techniques described, filter film 70 has a varying composition from edge 68 to 72. This compositional gradient of film 70 results in varying IR spectral absorption as shown by IR transmission graphs 10, 12, 14. Film 70 acts as a graded IR filter in concert with the response of the detector films 86, 88, 90. By the proper choice of the compositional gradients in these films, and as a result the IR spectral response, an integrated IR spectrometer may be fabricated whereby each detector 86, 87, 90 detects only specific narrow bands of IR wavelengths.

Abstract: The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.