Abstract: In various embodiments, a conversion LED is provided. The conversion LED may include a chip on which a first layer containing a fluorescent substance is deposited, a second layer containing a second fluorescent substance being deposited on said first layer, wherein the first layer is a potting material in which the first fluorescent substance is dispersed, and wherein the second layer is a solid body, said first layer being provided with a spacer.

Abstract: A light source unit may include a cooling device; a luminescent substance; an excitation radiation source having a laser source; and an optical element arranged between the radiation source and the substance; wherein the cooling device constitutes a heat sink, wherein the substance is linked thermally to the heat sink; and wherein the optical element is designed as an integrating optical element and is coupled between the radiation source and the substance in such a mariner that a part of the radiation emitted by the radiation source, entering in an acceptance angle range of the integrating optical element, is subjected to an internal reflection in the optical element before it exits the optical element and strikes the substance, and that a part of the radiation emitted by the substance enters the optical element and exits the optical element as effective radiation.

Abstract: An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Abstract: A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 ?m directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1?r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1?e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.

Abstract: An optoelectronic component comprises an organic layer sequence (1), which emits an electromagnetic radiation (15) having a first wavelength spectrum during operation, and also a dielectric layer sequence (2) and a wavelength conversion region (3) in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence (1). The wavelength conversion region (3) is configured to convert at least partially electromagnetic radiation having the first wavelength spectrum into an electromagnetic radiation (16) having a second wavelength spectrum. The dielectric layer sequence (2) is arranged in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence between the organic layer sequence (1) and the wavelength conversion region (3) and is at least partially opaque to an electromagnetic radiation having a third wavelength spectrum, which corresponds to at least one part of the second wavelength spectrum.

Abstract: A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.

Abstract: In various embodiments, a conversion LED is provided. The conversion LED may include a chip on which a first layer containing a fluorescent substance is deposited, a second layer containing a second fluorescent substance being deposited on said first layer, wherein the first layer is a potting material in which the first fluorescent substance is dispersed, and wherein the second layer is a solid body, said first layer being provided with a spacer.

Abstract: An LED lighting device is provided which may include at least one light-emitting diode and at least one conversion reflector, wherein the conversion reflector is configured to emit at least a portion of light emitted from the light-emitting diode at a converted wavelength, and wherein the conversion reflector covers the at least one light-emitting diode.

Abstract: A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 ?m directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1?r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1?e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.

Abstract: An illumination system for imaging illumination having at least one compact light source. The illumination system comprises a reflector having a reflector contour, the light source being accommodated in the vicinity of the reflector contour. A compact diffusing medium is accommodated at the focal point of the reflector, the light from the light sources being directed substantially onto the diffusing medium and, from there, being diffused onto the reflector contour, with the result that the light leaving the reflector is emitted homogeneously.

Abstract: A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.

Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Abstract: A color-tunable illumination system for imaging illumination having a tuning means and at least two light sources of different colors. The illumination system comprises a reflector having a reflector contour, the light sources being accommodated in the vicinity of the reflector contour, and a compact diffusing medium accommodated at the focal point of the reflector. The light from the light sources is directed substantially onto the diffusing medium and then, from there, is diffused onto the reflector contour, electronic driving of the light sources making it possible to regulate the intensity of the light sources separately from one another, with the result that the light leaving the reflector can be color-tuned.

Abstract: An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Abstract: A color-tunable illumination system for imaging illumination having a tuning means and at least two light sources of different colors. The illumination system comprises a reflector having a reflector contour, the light sources being accommodated in the vicinity of the reflector contour, and a compact diffusing medium accommodated at the focal point of the reflector. The light from the light sources is directed substantially onto the diffusing medium and then, from there, is diffused onto the reflector contour, electronic driving of the light sources making it possible to regulate the intensity of the light sources separately from one another, with the result that the light leaving the reflector can be color-tuned.

Abstract: An illumination system for imaging illumination having at least one compact light source. The illumination system comprises a reflector having a reflector contour, the light source being accommodated in the vicinity of the reflector contour. A compact diffusing medium is accommodated at the focal point of the reflector, the light from the light sources being directed substantially onto the diffusing medium and, from there, being diffused onto the reflector contour, with the result that the light leaving the reflector is emitted homogeneously.