Abstract: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

Abstract: Semiconductor nitride layers are produced using a corona discharge supersonic free-jet source producing an activated nitrogen molecule beam impacting a semiconductor substrate in the presence of a group III metal or impacting an oxide layer on a semiconductor substrate. The activated nitrogen molecules are of the form N2A3&Sgr;u+. Apparatus for producing the nitride layer on the substrate includes the corona discharge free-jet source, a skimmer to collimate the N2 beam and succeeding stages interconnected by collimators and evacuated to draw off background gases.

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer comprising a layer of monocrystalline oxide having a niobium concentration that provides for substantial lattice matching of the accommodating buffer layer to the overlying monocrystalline material layer. The monocrystalline oxide of the accommodating buffer layer is selected to be lattice matched to the underlying monocrystalline substrate. The accommodating buffer layer may be spaced apart from the underlying monocrystalline substrate by an amorphous interface layer. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include the use lateral epitaxial overgrowth to facilitate production of a high quality monocrystalline material layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract: High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.

Abstract: Solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The solar cell structures also include a dye (110) to increase an efficiency of the solar cell.

Abstract: Semiconductor nitride layers are produced using a corona discharge supersonic free-jet source producing an activated nitrogen molecule beam impacting a semiconductor substrate in the presence of a group III metal or impacting an oxide layer on a semiconductor substrate. The activated nitrogen molecules are of the form N2A3&Sgr;u+. Apparatus for producing the nitride layer on the substrate includes the corona discharge free-jet source, a skimmer to collimate the N2 beam and succeeding stages interconnected by collimators and evacuated to draw off background gases.

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.