Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is a sensor for detecting a component (20) of an atmosphere, the sensor comprising a sensing surface (14, 16) covered by a barrier layer (18) of a material switchable between respective layer orientations that have permeability to the component. A NFC device comprising such a sensor, a package incorporating the NFC device and a method of manufacturing the sensor are also disclosed.

Abstract: A method of making a resonator, preferably a nano-resonator, includes starting with a FINFET structure with a central bar, first and second electrodes connected to the central bar, and third and fourth electrodes on either side of the central bar and separated from the central bar by gate dielectric. The structure is formed on a buried oxide layer. The gate dielectric and buried oxide layer are then selectively etched away to provide a nano-resonator structure with a resonator element 30, a pair of resonator electrodes (32,34), a control electrode (36) and a sensing electrode (38).

Abstract: The invention relates to the manufacture of a semiconductor device (10) with a semiconductor body (1) and a substrate (2) and comprising at least one semiconductor element (3), which semiconductor device is equipped with at least one connection region (4) and a superjacent strip-shaped connection conductor (5) which is connected to the connection region, which connection region and connection conductor are both recessed in a dielectric, and a dielectric region (6) of a first material is provided on the semiconductor body (1) at the location of the connection region (4) to be formed, after which the dielectric region (6) is coated with a dielectric layer (7) of a second material that differs from the first material, which dielectric layer is provided, at the location of the strip-shaped connection conductor (5) to be formed, with a strip-shaped recess (7A) which overlaps the dielectric region (6) and extends up to said dielectric region, and after the formation of the recess (7A) and the removal of the dielect