Abstract: A method of heating an optical element in a microlithographic projection exposure apparatus and an optical system includes using a heating arrangement to introduce a heating power into the optical element. The heating power is regulated based on a setpoint value. The setpoint value is varied over time during the operation of the projection exposure apparatus. Varying the setpoint value for the heating power comprises a simulation of the effects of changes in the heating power relative to the actual value thereof based on a model for the thermal behavior of the optical element.

Abstract: For the qualification of a mask for microlithography, the effect of an aerial image of the mask on the wafer is ascertained by means of a simulation for predicting the wafer structures producible by means of the mask.

Abstract: When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 ?m×50 ?m. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.

Abstract: For approximating imaging properties of an optical production system which images an object to imaging properties of an optical measurement system when imaging the object, which imaging properties arise from an adjustment displacement of at least one component (Mi) of the optical measurement system, the following procedure is carried out: A production transfer function of the imaging is determined by the production system as a target transfer function. The production transfer function depends on an illumination setting for an object illumination. This determination is implemented for a target illumination setting. Furthermore, a measurement transfer function of the imaging is determined by the measurement system as an actual transfer function. The measurement transfer function likewise depends on the illumination setting for the object illumination. This determination is also implemented for the target illumination setting.

Abstract: For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

Abstract: For determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth, recorded 2D intensity distributions (15zi) of an unstructured measurement region of a lithography mask are evaluated in a spatially resolved manner.

Abstract: An EUV greyscale filter of an EUV optical unit of a metrology system has a membrane that is at least partly transmissive in regions for EUV light in the wavelength range of between 5 nm and 30 nm. The latter interacts with a whole beam of the EUV light in the operational position of the EUV greyscale filter. This results in a metrology system with extended application possibilities on account of the EUV greyscale filter.

Abstract: For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

Abstract: The invention relates to a method for examining a photolithographic mask for the extreme ultraviolet (EUV) wavelength range in a mask metrology apparatus. In this method, at least one structured region of the mask is selected, a scanner photon number in the extreme ultraviolet (EUV) wavelength range for which the mask in the lithographic production run is provided and a metrology photon number in the extreme ultraviolet (EUV) wavelength range with which the measurement is performed are determined. Next, a photon statistics examination mode is established on the basis of the scanner photon number and the metrology photon number and at least one aerial image of the at least one structured region is produced with the mask metrology apparatus.

Abstract: For the qualification of a mask for microlithography, the effect of an aerial image of the mask on the wafer is ascertained by means of a simulation for predicting the wafer structures producible by means of the mask.

Abstract: For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

Abstract: For determining a focus position of a lithography mask (e.g., 5), a focus stack of a measurement region free of structures to be imaged is recorded and the speckle patterns of the recorded images are evaluated.

Abstract: Determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks involves firstly focus-dependently measuring a 3D aerial image of the imaging optical unit as a sequence of 2D intensity distributions in different measurement planes in the region of and parallel to an image plane of an imaging of an object by use of the imaging optical unit. A spectrum of a speckle pattern of the 3D aerial image is then determined by Fourier transformation of the measured 2D intensity distributions having speckle patterns. For a plurality of spectral components in the frequency domain, a focus dependence of a real part RS(z) and an imaginary part IS(z) of said spectral component is then determined.

Abstract: For determining a focus position of a lithography mask (e.g., 5), a focus stack of a measurement region free of structures to be imaged is recorded and the speckle patterns of the recorded images are evaluated.

Abstract: For determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth, recorded 2D intensity distributions (15z1) of an unstructured measurement region of a lithography mask are evaluated in a spatially resolved manner.

Abstract: Determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks involves firstly focus-dependently measuring a 3D aerial image of the imaging optical unit as a sequence of 2D intensity distributions in different measurement planes in the region of and parallel to an image plane of an imaging of an object by use of the imaging optical unit. A spectrum of a speckle pattern of the 3D aerial image is then determined by Fourier transformation of the measured 2D intensity distributions having speckle patterns. For a plurality of spectral components in the frequency domain, a focus dependence of a real part RS(z) and an imaginary part IS(z) of said spectral component is then determined.

Abstract: For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

Abstract: The invention relates to a method for examining a photolithographic mask for the extreme ultraviolet (EUV) wavelength range in a mask metrology apparatus. In this method, at least one structured region of the mask is selected, a scanner photon number in the extreme ultraviolet (EUV) wavelength range for which the mask in the lithographic production run is provided and a metrology photon number in the extreme ultraviolet (EUV) wavelength range with which the measurement is performed are determined. Next, a photon statistics examination mode is established on the basis of the scanner photon number and the metrology photon number and at least one aerial image of the at least one structured region is produced with the mask metrology apparatus.

Abstract: An EUV greyscale filter of an EUV optical unit of a metrology system has a membrane that is at least partly transmissive in regions for EUV light in the wavelength range of between 5 nm and 30 nm. The latter interacts with a whole beam of the EUV light in the operational position of the EUV greyscale filter. This results in a metrology system with extended application possibilities on account of the EUV greyscale filter.

Abstract: A method for measuring an angularly resolved intensity distribution in a reticle plane (24) of a projection exposure apparatus (10). The apparatus includes an illumination system (16), irradiating a reticle (22) arranged in the reticle plane (24) and having a first pupil plane (20). All planes of the projection exposure apparatus which are conjugate thereto are further pupil planes, and the reticle plane (24) and all planes which are conjugate thereto are field planes. The method includes: arranging a spatially resolving detection module (44) in the region of one of the field planes (24, 30) such that the detection module is at a smaller distance from this field plane than from the closest pupil plane (20), radiating electromagnetic radiation (21) onto an optical module (42) from the illumination system, and determining an angularly resolved intensity distribution of the radiation from a signal recorded by the detection module.