Patents by Inventor Dirk J. Sundt

Dirk J. Sundt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method for forming a faceted opening and a layer filling therein
    Patent number: 6727158
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: April 27, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman
  • Structure and method for forming a faceted opening and layer filling therein
    Publication number: 20040046229
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Application
    Filed: July 15, 2003
    Publication date: March 11, 2004
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman
  • Structure and method for forming a faceted opening and a layer filling therein
    Publication number: 20030085444
    Abstract: Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.
    Type: Application
    Filed: November 8, 2001
    Publication date: May 8, 2003
    Inventors: Dirk J. Sundt, William A. Polinsky, Mark A. Bossler, Gabriel G. Videla, Chris L. Inman