Patents by Inventor Dirk Karl Manger

Dirk Karl Manger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma treatment to enhance inorganic dielectric adhesion to copper
    Patent number: 6593660
    Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: July 15, 2003
    Assignee: International Business Machines Corporation
    Inventors: Leena P. Buchwalter, Barbara Luther, Paul D. Agnello, John P. Hummel, Terence Lawrence Kane, Dirk Karl Manger, Paul Stephen McLaughlin, Anthony Kendall Stamper, Yun Yu Wang
  • Plasma treatment to enhance inorganic dielectric adhesion to copper
    Publication number: 20010053591
    Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.
    Type: Application
    Filed: May 29, 2001
    Publication date: December 20, 2001
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Leena P. Buchwalter, Barbara Luther, Paul D. Agnello, John P. Hummel, Terence Lawrence Kane, Dirk Karl Manger, Paul Stephen Mclaughlin, Anthony Kendall Stamper, Yun Yu Wang
  • Plasma treatment to enhance inorganic dielectric adhesion to copper
    Patent number: 6261951
    Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: July 17, 2001
    Assignee: International Business Machines Corporation
    Inventors: Leena P. Buchwalter, Barbara Luther, Paul D. Agnello, John P. Hummel, Terence Lawrence Kane, Dirk Karl Manger, Paul Stephen McLaughlin, Anthony Kendall Stamper, Yun Yu Wang