Patents by Inventor Dirk N. Weiss

Dirk N. Weiss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8710348
    Abstract: A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.
    Type: Grant
    Filed: October 21, 2008
    Date of Patent: April 29, 2014
    Inventors: Dirk N. Weiss, Thomas D. Radcliff, Rhonda R. Willigan
  • Publication number: 20130125983
    Abstract: A method for manufacturing a photovoltaic device comprises the steps choosing a substrate with a conductive layer; depositing a non-conductive layer; imprinting a structure comprising features into the non-conductive layer; and depositing an active layer operable in the photovoltaic device; wherein the active layer is in electrical contact with the conductive layer through a feature in the imprinted layer.
    Type: Application
    Filed: November 18, 2011
    Publication date: May 23, 2013
    Applicant: INTEGRATED PHOTOVOLTAIC, INC.
    Inventor: Dirk N. Weiss
  • Publication number: 20100095997
    Abstract: A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.
    Type: Application
    Filed: October 21, 2008
    Publication date: April 22, 2010
    Inventors: Dirk N. Weiss, Thomas D. Radcliff, Rhonda R. Willigan