Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

Abstract: A device for an image sensor is provided. The device includes a semiconductor device including a photo-sensitive region configured to generate an electric signal based on incident light. Additionally, the device includes an optical element including a first surface for receiving the incident light and a second surface opposite the first surface and turned towards the photo-sensitive region. The first surface and the second surface are tilted by a tilt angle relative to each other so as to modify a direction of propagation of the incident light passing through the optical element towards a center of the photo-sensitive region to compensate for a chief ray angle of the incident light.

Abstract: An active pixel sensor includes at least one pixel, including: a photoactive area, and at least one polysilicon component arranged over the photoactive area such that a photon may pass the polysilicon component prior to entering the photoactive area, wherein the polysilicon component includes a diffraction structure configured to diffract incoming photons and thereby extend the light path of the incoming photons within the photoactive area.

Abstract: An active pixel sensor includes at least one pixel, including: a photoactive area, and at least one polysilicon component arranged over the photoactive area such that a photon may pass the polysilicon component prior to entering the photoactive area, wherein the polysilicon component includes a diffraction structure configured to diffract incoming photons and thereby extend the light path of the incoming photons within the photoactive area.

Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

Abstract: A time-of-flight sensor includes at least one pixel, including: a Si-based photocurrent collecting structure and a Ge-based photosensitive structure epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure includes an n-doped region and a p-doped region, wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact and wherein the conduction band in the p-doped region includes a barrier for the electrons of the photocurrent and the valence band in the n-doped region includes a barrier for the holes of the photocurrent.

Abstract: A method of aligning a lithographic layer on a semiconductor wafer comprises forming, in a first side of the semiconductor wafer, a first alignment structure from one or more first trenches. In some embodiments, the trenches are formed to a depth reaching to within about three micrometers from the second side of the semiconductor wafer, for example. In others, the wafer is thinned after the first alignment structure is formed, so that the trenches then reach to within about three micrometers from the second side of the semiconductor wafer. At least one lithographic layer is aligned on a second side of the semiconductor wafer by detecting the first alignment structure from the second side, using illumination in the visible spectrum.

Abstract: A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.

Abstract: A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.

Abstract: An image sensor device includes a pixel. The pixel includes a semiconductor layer having a first surface. A photodiode is formed in the semiconductor layer and is configured to generate charge carriers based on light reaching the photodiode. A storage node is formed in the semiconductor layer, the storage node being arranged so that charge carriers generated in the photodiode are transferred to the storage node. A light-shielding structure is formed in the semiconductor layer and is disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light travelling in the semiconductor layer away from the first surface from reaching the storage node.

Abstract: A time of flight sensor includes at least one pixel, including: an epitaxially-grown Ge-based photosensitive structure including an upper portion and a trunk portion, a Si-based photocurrent collecting structure, a dielectric material layer arranged at least between the upper portion of the photosensitive structure and the photocurrent collecting structure, wherein the trunk portion of the photosensitive structure is arranged within an aperture in the dielectric material layer, and at least one n-contact configured to collect electrons of a photocurrent and at least one p-contact configured to collect holes of the photocurrent, the at least one n-contact and p-contact arranged in the photocurrent collecting structure.

Abstract: A device for an image sensor is provided. The device includes a semiconductor device including a photo-sensitive region configured to generate an electric signal based on incident light. Additionally, the device includes an optical element including a first surface for receiving the incident light and a second surface opposite the first surface and turned towards the photo-sensitive region. The first surface and the second surface are tilted by a tilt angle relative to each other so as to modify a direction of propagation of the incident light passing through the optical element towards a center of the photo-sensitive region to compensate for a chief ray angle of the incident light.

Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Abstract: An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.