Patents by Inventor Dirk RUDLOFF

Dirk RUDLOFF has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectromechanical component and method for producing same
    Patent number: 11148940
    Abstract: In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: October 19, 2021
    Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Dirk Rudloff, Martin Friedrichs, Sebastian Doering, Arnd Huerrich
  • MICROELECTROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME
    Publication number: 20200239303
    Abstract: In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).
    Type: Application
    Filed: October 8, 2018
    Publication date: July 30, 2020
    Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Dirk RUDLOFF, Martin FRIEDRICHS, Sebastian DOERING, Arnd HUERRICH