Abstract: The invention relates to a device for measuring a substrate for semiconductor lithography, comprising an illumination optical unit, an imaging optical unit and a recording device arranged in the image plane of the imaging optical unit, a diffractive element being arranged in the pupil of the imaging optical unit. The invention also relates to a method for measuring a substrate for semiconductor lithography with a measuring device, the measuring device comprising an imaging optical unit with a pupil, with the following method steps: arranging a diffractive element in the pupil of the imaging optical unit for producing a multifocal imaging, capturing the imaging of a partial region of the substrate, and evaluating the imaging.

Abstract: To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection.

Abstract: The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.

Abstract: A computer implemented method for inspecting a photolithography mask to predict defects in wafers, the method comprising: providing a model of the photolithography mask comprising one or more target features and one or more sub-resolution assist features, the photolithography mask being configured for printing of the one or more target features onto a wafer in a printing process using a photolithography system; identifying one or more critical locations in the model of the photolithography mask by verifying a predefined constraint concerning the target features and/or the sub-resolution assist features; generating an aerial image of the photolithography mask comprising the one or more identified critical locations by applying a model of the photolithography system to the photolithography mask; predicting defects in wafers by comparing the one or more identified critical locations of the aerial image to one or more corresponding locations of a reference image.

Abstract: A wide-field swept-source OCT method that images a moving object including an anterior chamber. Including providing wavelength-tuned illumination radiation in individual illumination pulses of different centroid wavelengths, illuminating the object and imaging the object on a 2-D detector having an image recording cycle of exposure intervals and read-out intervals, emitting the pulses as a series of first pulses and second pulses, with pulses with the same centroid wavelengths repeating at least once over the illumination pulse pairs, synchronizing the pulses and the detector such that the illumination pulse pairs are grouped around every second of the read-out intervals of the sequence, and generating image pairs from the detector signals corresponding to the illumination pulse pairs, determining changes between the image data of the illumination pulses with the same centroid wavelength repeated over the illumination pulse pairs and using the changes to correct movements of the object in the image data.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: In a method for determining the phase and/or refractive index of a region of an object, the object region is illuminated with coherent or partly coherent light and is imaged into the image plane a number of times with different imaging properties and is recorded in order to obtain a plurality of intensity recordings of the object region. The phase and/or refractive index determination is carried out based upon the plurality of intensity recordings. The different imaging properties differ at least in terms of different phase shifts which are additionally introduced into the imaging beam path, and which are generated differently than by changing the focusing when carrying out the recordings. The different phase shifts which are additionally introduced into the imaging beam path are effected by introducing at least one optical element into the objective and/or manipulating at least one optical element of the objective.

Abstract: The invention relates to an autofocusing method for an imaging device (for semiconductor lithography) comprising an imaging optical unit, an object to be measured and an autofocusing device having a reflective illumination, comprising the following method steps: a) defining at least three basis measurement points M(xj, yj) on a surface of the object, b) determining the deviation Az(M)j of a nominal position of the surface of the object from the focal plane of the autofocusing device at the defined basis measurement points M(xj, yj), c) storing the deviations Az(M)j from at least three basis measurement points M(xj, yj), d) using the stored deviation Az(M)j for determining a deviation Az(P)k at an arbitrary point P(xk, Yk) of the surface, and e) using the deviation Az(P)k for focusing onto the point P(xk, Yk).

Abstract: When detecting an object structure, at least one portion of the object is initially illuminated with illumination light of an at least partly coherent light source from at least one preferred illumination direction. At least one diffraction image of the illuminated portion is recorded by spatially resolved detection of the diffraction intensity of the illumination light, diffracted by the illuminated portion, in a detection plane. At least one portion of the object structure is reconstructed from the at least one recorded diffraction image using an iterative method. Here, the iteration diffraction image of a raw object structure is calculated starting from an iteration start value and said raw object structure is compared to the recorded diffraction image in each iteration step.

Abstract: A computer-implemented method includes receiving a focal image stack. The focal image stack includes multiple images of a measurement object. Each of the images captures a region of a surface of the measurement object with a defined focal plane position in a depth direction. The defined focal plane positions of the plurality of images are different from each other. The method includes generating an initial image with an extended depth of field in the depth direction based on the focal image stack. The method includes generating a corrected image by correcting a set of imaging errors in the initial image. The set of imaging errors includes a distortion error.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask. The invention furthermore relates to a corresponding computer program product and to the use of the above method in the course of a microlithographic process.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection.

Abstract: Methods and apparatuses for determining a quality of a mask of a photolithography apparatus are provided, which comprise a parallel calculation, using a plurality of computing devices, of a reference aerial image on the basis of a design of the mask and optical properties of the photolithography apparatus on a plurality of computing devices.

Abstract: The invention relates to a device for measuring a substrate for semiconductor lithography, comprising an illumination optical unit, an imaging optical unit and a recording device arranged in the image plane of the imaging optical unit, a diffractive element being arranged in the pupil of the imaging optical unit. The invention also relates to a method for measuring a substrate for semiconductor lithography with a measuring device, the measuring device comprising an imaging optical unit with a pupil, with the following method steps: arranging a diffractive element in the pupil of the imaging optical unit for producing a multifocal imaging, capturing the imaging of a partial region of the substrate, and evaluating the imaging.

Abstract: The invention relates to an autofocusing method for an imaging device (for semiconductor lithography) comprising an imaging optical unit, an object to be measured and an autofocusing device having a reflective illumination, comprising the following method steps: a) defining at least three basis measurement points M(xj, yj) on a surface of the object, b) determining the deviation Az(M)j of a nominal position of the surface of the object from the focal plane of the autofocusing device at the defined basis measurement points M(xj, yj), c) storing the deviations Az(M)j from at least three basis measurement points M(xj, yj), d) using the stored deviation Az(M)j for determining a deviation Az(P)k at an arbitrary point P(xk, Yk) of the surface, and e) using the deviation Az(P)k for focusing onto the point P(xk, Yk).

Abstract: The invention relates to a method for determining an imaging function of a mask inspection microscope, wherein the mask inspection microscope comprises an imaging optical element, a tube, a recording device, an object stage, an illumination unit for measurement with transmitted light and an illumination unit for measurement in reflection, comprising the following method steps: a) measuring the intensities in the pupil plane of the imaging optical element in a reflective measurement, b) measuring the intensities in the pupil plane of the imaging optical element in a transmitted-light measurement, d) Determining the imaging function of the intensities of the imaging optical element, d) determining the imaging function of the intensities of the illumination optical element comprised in the illumination unit for the transmitted-light measurement.