Patents by Inventor Dirk Toebben

Dirk Toebben has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming of a silicon oxide layer on a topography
    Patent number: 5780103
    Abstract: A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: July 14, 1998
    Assignee: Siemens Aktiengesellschaft
    Inventors: Dirk Toebben, Doerthe Groteloh, Oswald Spindler, Michael Rogalli