Patents by Inventor Dirk WAEHLISCH

Dirk WAEHLISCH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer composed of silicon and method for producing same
    Patent number: 9230798
    Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: January 5, 2016
    Assignee: SILTRONIC AG
    Inventors: Timo Mueller, Michael Gehmlich, Frank Faller, Dirk Waehlisch
  • SEMICONDUCTOR WAFER COMPOSED OF SILICON AND METHOD FOR PRODUCING SAME
    Publication number: 20150325433
    Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.
    Type: Application
    Filed: May 5, 2015
    Publication date: November 12, 2015
    Inventors: Timo MUELLER, Michael GEHMLICH, Frank FALLER, Dirk WAEHLISCH