Patents by Inventor Dirk Wouters
Dirk Wouters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10367414Abstract: A switch mode power supply is described including a primary side for coupling to a mains supply and a secondary side for coupling to a device, an isolation transformer comprising a primary coil and a secondary coil and arranged to isolate the primary side from the secondary side, and a noise filter coupled between a primary ground at the primary side and a secondary ground at the secondary side, the noise filter having a conductance value that varies with frequency. The noise filter conductance comprises a peak conductance in a peak conductance frequency region. The noise filter is operable to reduce the common-mode noise of the switch mode power supply at frequencies occurring in the peak conductance frequency region.Type: GrantFiled: April 11, 2017Date of Patent: July 30, 2019Assignee: NXP B.V.Inventors: Marcel Wilhelm Rudolf Martin van Roosmalen, Petrus Cornelis Theodorus Laro, Humphrey de Groot, Bobby Jacob Daniel, Arjan van den Berg, Dirk Wouter Johannes Groeneveld
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Patent number: 9972386Abstract: The present invention provides a resistive memory array arranged in a 3D stack comprising a plurality of resistivity switching memory elements laid out in an array in a first and second direction, and stacked in a third direction, a plurality of first electrodes and a plurality of second electrodes extending in the first direction, each first electrode and each second electrode being associated with the at least one resistivity switching memory element, and a plurality of transistor devices, each transistor device being electrically coupled to one of the resistivity switching memory elements, an inversion or accumulation channel of a transistor device being adapted for forming a switchable resistivity path in the third direction, between the electrically coupled resistivity switching memory element and the associated second electrode, wherein the memory array furthermore comprises at least one third electrode provided in a trench through the stack.Type: GrantFiled: December 20, 2012Date of Patent: May 15, 2018Assignee: IMECInventors: Pieter Blomme, Dirk Wouters
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Publication number: 20170302164Abstract: A switch mode power supply is described including a primary side for coupling to a mains supply and a secondary side for coupling to a device, an isolation transformer comprising a primary coil and a secondary coil and arranged to isolate the primary side from the secondary side, and a noise filter coupled between a primary ground at the primary side and a secondary ground at the secondary side, the noise filter having a conductance value that varies with frequency. The noise filter conductance comprises a peak conductance in a peak conductance frequency region. The noise filter is operable to reduce the common-mode noise of the switch mode power supply at frequencies occurring in the peak conductance frequency region.Type: ApplicationFiled: April 11, 2017Publication date: October 19, 2017Inventors: Marcel Wilhelm Rudolf Martin van Roosmalen, Petrus Cornelis Theodorus Laro, Humphrey de Groot, Bobby Jacob Daniel, Arjan van den Berg, Dirk Wouter Johannes Groeneveld
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Patent number: 9484389Abstract: A method for manufacturing a three-dimensional resistive memory array is disclosed. The method comprises forming a repetitive sequence comprising an isolating layer, a semiconductor layer, a gate insulating layer, and a conductive layer. By performing a plurality of processing steps on the repetitive sequence a three-dimensional resistive memory array is obtained. A three-dimensional resistive memory array is further disclosed.Type: GrantFiled: December 19, 2014Date of Patent: November 1, 2016Assignee: IMECInventors: Dirk Wouters, Gouri Sankar Kar
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Publication number: 20150179705Abstract: A method for manufacturing a three-dimensional resistive memory array is disclosed. The method comprises forming a repetitive sequence comprising an isolating layer, a semiconductor layer, a gate insulating layer, and a conductive layer. By performing a plurality of processing steps on the repetitive sequence a three-dimensional resistive memory array is obtained. A three-dimensional resistive memory array is further disclosed.Type: ApplicationFiled: December 19, 2014Publication date: June 25, 2015Inventors: Dirk Wouters, Gouri Sankar KAR
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Patent number: 8963431Abstract: A circuit is disclosed for driving a plurality of LED strings from an AC supply and arranged to, in use, drive current through a series arrangement of a plurality N of the LED strings when the AC voltage is sufficient to drive the plurality N of the LED strings: the circuit comprising a first current source configured to be switchably connected to a one end of said series arrangement of N LED strings; a series combination of a second current source and a heat dissipater, wherein the series combination of the second current source and the heat dissipater is arranged in parallel with the first current source; and a current balancer for balancing the current through the first current source and the second current source. A driver for such a circuit is also disclosed.Type: GrantFiled: March 21, 2013Date of Patent: February 24, 2015Assignee: NXP B.V.Inventors: Arjan van den Berg, Jie Chen, Wihelmus Hinderikus Maria Langeslag, Anton Cornelis Blom, Dirk Wouter Johannes Groeneveld
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Patent number: 8310857Abstract: A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.Type: GrantFiled: June 2, 2010Date of Patent: November 13, 2012Assignee: IMECInventors: Ludovic Goux, Judit Lisoni Reyes, Dirk Wouters
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Patent number: 8232174Abstract: The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.Type: GrantFiled: August 31, 2007Date of Patent: July 31, 2012Assignees: NXP B.V., IMECInventors: Ludovic Goux, Dirk Wouters
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Patent number: 8206995Abstract: A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.Type: GrantFiled: December 4, 2009Date of Patent: June 26, 2012Assignee: IMECInventors: Judit Gloria Lisoni Reyes, Ludovic Goux, Dirk Wouters
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Patent number: 8008644Abstract: A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.Type: GrantFiled: May 18, 2006Date of Patent: August 30, 2011Assignee: NXP B.V.Inventors: Ludovic Goux, Dirk Wouters, Judit Lisoni, Thomas Gille
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Patent number: 7960775Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.Type: GrantFiled: November 7, 2008Date of Patent: June 14, 2011Assignees: IMEC, University of South Toulon VARInventors: Lorene Courtade, Judit Lisoni Reyes, Ludovic Goux, Christian Turquat, Christophe Muller, Dirk Wouters
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Patent number: 7897952Abstract: A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.Type: GrantFiled: May 18, 2006Date of Patent: March 1, 2011Assignee: NXP B.V.Inventors: Dirk Wouters, Ludovic Goux, Judith Lisoni, Thomas Gille
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Publication number: 20110044089Abstract: A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.Type: ApplicationFiled: June 2, 2010Publication date: February 24, 2011Applicant: IMECInventors: Ludovic Goux, Judit Lisoni Reyes, Dirk Wouters
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Publication number: 20100202193Abstract: A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less.Type: ApplicationFiled: April 30, 2008Publication date: August 12, 2010Applicants: NXP B.V., TERUNIVERSITAR MICROELEKTRONICA CENTRUM VZWInventors: Ludovic Goux, Judit Lisoni Reyes, Thomas Gille, Dirk Wouters
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Publication number: 20100155687Abstract: A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.Type: ApplicationFiled: December 4, 2009Publication date: June 24, 2010Applicant: IMECInventors: Judit Gloria Lisoni Reyes, Ludovic Goux, Dirk Wouters
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Publication number: 20100127233Abstract: The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.Type: ApplicationFiled: August 31, 2007Publication date: May 27, 2010Applicants: NXP, B.V., INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)Inventors: Ludovic Goux, Dirk Wouters
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Publication number: 20100090192Abstract: For improved scalability of resistive switching memories, a cross-point resistive switching structure is disclosed wherein the plug itself is used to store the resistive switching material and where the top electrode layer is self-aligned to the plug using, for example, chemical-mechanical-polishing (CMP) or simply mechanical-polishing.Type: ApplicationFiled: August 31, 2007Publication date: April 15, 2010Applicants: NXP, B.V., INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)Inventors: Ludovic Goux, Dirk Wouters
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Publication number: 20100072531Abstract: A method is disclosed for manufacturing SrxTiyO3 based metal-insulator-metal (MIM) capacitors using a low temperature Atomic Layer Deposition (ALD) process. Preferably TiN is used to form the bottom electrode. The Sr/Ti ratio in the SrxTiyO3 dielectric layer of the capacitor can be varied to tune the electric properties of the capacitor. The dielectric constant and the leakage current of the SrxTiyO3 dielectric layer decrease monotonously with the Sr content of this SrxTi1-xO3 dielectric layer. By increasing the Sr content at the interface between the SrxTiyO3 dielectric layer and the TiN bottom electrode, the interfacial equivalent-oxide thickness (EOT) can be further reduced.Type: ApplicationFiled: September 22, 2009Publication date: March 25, 2010Applicant: IMECInventors: Jorge Kittl, Mihaela Ioana Popovici, Nicolas Menou, Dirk Wouters
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Publication number: 20090152526Abstract: The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.Type: ApplicationFiled: November 7, 2008Publication date: June 18, 2009Applicants: Interuniversitair Microelektronica Centrum (IMEC) vzw, University of South Toulon VarInventors: Lorene Courtade, Judit Lisoni Reyes, Ludovic Goux, Christian Turquat, Christophe Muller, Dirk Wouters
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Patent number: 7464433Abstract: A wiper blade is proposed, which is used to clean windows, in particular of motor vehicles. The wiper blade is arranged with a rubber elastic wiper strip (24) on the one band surface (22) of a band-like, long-stretched-out, elastic supporting element (12) and can be placed on the to-be-wiped window (14). The other band surface (16) of the supporting element is covered by another component (40) of the wiper blade (10), at least in sections, and this covering part is provided with claw-like projections (54) arranged in the longitudinal direction of the wiper blade, which grip under holding edges (38) of the supporting element. A particularly tension-neutral and easily mountable wiper blade is achieved if the covering part (40), manufactured of an elastic plastic, is provided with an armoring (60) in the area of its projections (54) whose strength is greater than the strength of the plastic used for the covering part.Type: GrantFiled: March 11, 2004Date of Patent: December 16, 2008Assignee: Robert Bosch GmbHInventors: Wolfgang Thomar, Dirk Wouters, Peter De Block, Olivier Janssens, Jos Feyaerts, Roger Van den Eynde, Wim Desmet