Patents by Inventor Divya GANGADHARAN

Divya GANGADHARAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12095459
    Abstract: In certain aspects, an apparatus includes a first gating circuit having an input and an output, wherein the input of the first gating circuit is configured to receive a first clock signal. The apparatus also includes a delay circuit having an input and an output, wherein the input of the delay circuit is coupled to the output of the first gating circuit. The apparatus further includes a control circuit configured to receive an enable signal, detect a logic state at the output of the delay circuit, and cause the first gating circuit to pass or gate the first clock signal based on the enable signal and the detected logic state at the output of the delay circuit.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: September 17, 2024
    Assignee: QUALCOMM INCORPORATED
    Inventors: Kevin Bowles, Chirag Maheshwari, Divya Gangadharan, Venkat Narayanan, Masoud Zamani
  • Patent number: 11934219
    Abstract: An aspect of the disclosure relates to an integrated circuit (IC). The IC includes a first set of test clock controllers (TCCs) including a first set of clock outputs, respectively; and a first set of functional cores including a first set of clock inputs coupled to the first set of clock outputs of the first set of TCCs, respectively.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: March 19, 2024
    Assignee: QUALCOMM INCORPORATED
    Inventors: Arvind Jain, Divya Gangadharan, Muhammad Nasir, Hong Dai, Madan Krishnappa
  • Publication number: 20230396253
    Abstract: In certain aspects, an apparatus includes a first gating circuit having an input and an output, wherein the input of the first gating circuit is configured to receive a first clock signal. The apparatus also includes a delay circuit having an input and an output, wherein the input of the delay circuit is coupled to the output of the first gating circuit. The apparatus further includes a control circuit configured to receive an enable signal, detect a logic state at the output of the delay circuit, and cause the first gating circuit to pass or gate the first clock signal based on the enable signal and the detected logic state at the output of the delay circuit.
    Type: Application
    Filed: June 1, 2022
    Publication date: December 7, 2023
    Inventors: Kevin BOWLES, Chirag MAHESHWARI, Divya GANGADHARAN, Venkat NARAYANAN, Masoud ZAMANI
  • Publication number: 20230315141
    Abstract: An aspect of the disclosure relates to an integrated circuit (IC). The IC includes a first set of test clock controllers (TCCs) including a first set of clock outputs, respectively; and a first set of functional cores including a first set of clock inputs coupled to the first set of clock outputs of the first set of TCCs, respectively.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 5, 2023
    Inventors: Arvind JAIN, Divya GANGADHARAN, Muhammad NASIR, Hong DAI, Madan KRISHNAPPA
  • Patent number: 9190405
    Abstract: A CMOS device including a standard cell includes first and second transistors with a gate between the first and second transistors. One active region extends between the first and second transistors and under the gate. In a first configuration, when drains/sources of the first and second transistors on the sides of the gate carry the same signal, the drains/sources are connected together and to the gate. In a second configuration, when a source of the first transistor on a side of the gate is connected to a source voltage and a drain/source of the second transistor on the other side of the gate carries a signal, the source of the first transistor is connected to the gate. In a third configuration, when sources of the first and second transistors on the sides of the gate are connected to a source voltage, the gate floats.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: November 17, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Xiangdong Chen, Ohsang Kwon, Satyanarayana Sahu, Divya Gangadharan, Chih-Iung Kao, Renukprasad Shreedhar Hiremath, Animesh Datta, Qi Ye
  • Publication number: 20150221639
    Abstract: A CMOS device including a standard cell includes first and second transistors with a gate between the first and second transistors. One active region extends between the first and second transistors and under the gate. In a first configuration, when drains/sources of the first and second transistors on the sides of the gate carry the same signal, the drains/sources are connected together and to the gate. In a second configuration, when a source of the first transistor on a side of the gate is connected to a source voltage and a drain/source of the second transistor on the other side of the gate carries a signal, the source of the first transistor is connected to the gate. In a third configuration, when sources of the first and second transistors on the sides of the gate are connected to a source voltage, the gate floats.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 6, 2015
    Applicant: QUALCOMM Incorporated
    Inventors: Xiangdong CHEN, Ohsang KWON, Satyanarayana SAHU, Divya GANGADHARAN, Chih-lung KAO, Renukprasad Shreedhar HIREMATH, Animesh DATTA, Qi YE