Abstract: A float detector includes a latch and a float detection circuit. The latch includes a latch output and an input/output (I/O) terminal. The I/O terminal is coupled to an input terminal. The float detection circuit includes a detection input, a drive output, and a float detection circuit. The detection input is coupled to the latch output. The drive output is coupled to the I/O terminal. The float detector is configured to provide a drive signal at the drive output, and determine that the input terminal is floating based on a latch output signal received at the detection input responsive to the drive signal.

Abstract: Apparatuses, systems, methods, and computer program products for enhanced erase retry of a non-volatile storage device are disclosed. An apparatus includes a non-volatile storage device and a controller. A controller includes a verification component configured to detect that an erase operation performed on an erase block of a non-volatile storage device is unsuccessful. A controller includes a parameter component configured to adjust one or more erase parameters for an erase operation. One or more erase parameters may be associated with one or more select gate drain storage cells of an erase block. A controller includes an erase component configured to retry an erase operation on an erase block with one or more adjusted erase parameters.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Abstract: Apparatuses, systems, methods, and computer program products for enhanced erase retry of a non-volatile storage device are disclosed. An apparatus includes a non-volatile storage device and a controller. A controller includes a verification component configured to detect that an erase operation performed on an erase block of a non-volatile storage device is unsuccessful. A controller includes a parameter component configured to adjust one or more erase parameters for an erase operation. One or more erase parameters may be associated with one or more select gate drain storage cells of an erase block. A controller includes an erase component configured to retry an erase operation on an erase block with one or more adjusted erase parameters.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Abstract: A storage system and method for marginal write-abort detection using a memory parameter change is provided. In one embodiment, a method for detecting a write abort is provided that is performed in a storage system having a memory. The method comprises reading a lower page in memory; determining if any data is written in the lower page; and in response to determining that no data is written in the lower page: increasing source voltage for memory cells in the lower page; re-reading the lower page; determining if a read failure exists in the re-read lower page; and in response to determining that a read failure exists in the re-read lower page, detecting a write abort. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.