Patents by Inventor Diwakar N. KEDLAYA
Diwakar N. KEDLAYA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11830706Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.Type: GrantFiled: December 4, 2019Date of Patent: November 28, 2023Assignee: Applied Materials, Inc.Inventors: Venkata Sharat Chandra Parimi, Zubin Huang, Jian Li, Satish Radhakrishnan, Rui Cheng, Diwakar N. Kedlaya, Juan Carlos Rocha-Alvarez, Umesh M. Kelkar, Karthik Janakiraman, Sarah Michelle Bobek, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Byung Seok Kwon
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Patent number: 11598004Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.Type: GrantFiled: February 26, 2020Date of Patent: March 7, 2023Assignee: APPLIED MATERIALS, iNC.Inventors: Hanish Kumar Panavalappil Kumarankutty, Prashant A. Desai, Diwakar N. Kedlaya, Sumit Agarwal, Vidyadharan Srinivasa Murthy Bangalore, Truong Nguyen, Zubin Huang
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Patent number: 11456173Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.Type: GrantFiled: February 21, 2020Date of Patent: September 27, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Meenakshi Gupta, Rui Cheng, Srinivas Guggilla, Karthik Janakiraman, Diwakar N. Kedlaya, Zubin Huang
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Patent number: 11443919Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.Type: GrantFiled: February 7, 2020Date of Patent: September 13, 2022Assignee: Applied Materials, Inc.Inventors: Krishna Nittala, Diwakar N. Kedlaya, Karthik Janakiraman, Yi Yang, Rui Cheng
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Patent number: 11009455Abstract: Systems and methods used to deliver a processing gas having a desired diborane concentration to a processing volume of a processing chamber are provided herein. In one embodiment a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, individual ones of the plurality of windows are disposed at opposite ends of the body and the body and the plurality of windows collectively define a cell volume. The borane concentration sensor further includes a radiation source disposed outside of the cell volume proximate to a first window of the plurality of windows, and a radiation detector disposed outside the cell volume proximate to a second window of the plurality of windows.Type: GrantFiled: July 2, 2019Date of Patent: May 18, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Zubin Huang, Sarah Langlois White, Jonathan Robert Bakke, Diwakar N. Kedlaya, Juan Carlos Rocha, Fang Ruan
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Publication number: 20200321210Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.Type: ApplicationFiled: February 21, 2020Publication date: October 8, 2020Inventors: Meenakshi GUPTA, Rui CHENG, Srinivas GUGGILLA, Karthik JANAKIRAMAN, Diwakar N. KEDLAYA, Zubin HUANG
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Publication number: 20200291522Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.Type: ApplicationFiled: February 26, 2020Publication date: September 17, 2020Inventors: Hanish Kumar PANAVALAPPIL KUMARANKUTTY, Prashant A. DESAI, Diwakar N. KEDLAYA, Sumit AGARWAL, Vidyadharan Srinivasa Murthy BANGALORE, Truong NGUYEN, Zubin HUANG
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Publication number: 20200266064Abstract: Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).Type: ApplicationFiled: February 13, 2020Publication date: August 20, 2020Inventors: Rajaram NARAYANAN, Fang RUAN, Prashant Kumar KULSHRESHTHA, Diwakar N. KEDLAYA, Karthik JANAKIRAMAN
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Publication number: 20200258720Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.Type: ApplicationFiled: February 7, 2020Publication date: August 13, 2020Inventors: Krishna NITTALA, Diwakar N. KEDLAYA, Karthik JANAKIRAMAN, Yi YANG, Rui CHENG
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Publication number: 20200234932Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.Type: ApplicationFiled: December 4, 2019Publication date: July 23, 2020Inventors: Venkata Sharat Chandra PARIMI, Zubin HUANG, Jian LI, Satish RADHAKRISHNAN, Rui CHENG, Diwakar N. KEDLAYA, Juan Carlos ROCHA-ALVAREZ, Umesh M. KELKAR, Karthik JANAKIRAMAN, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR, Byung Seok KWON
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Publication number: 20200211834Abstract: Methods for forming the silicon boron nitride layer are provided. The method includes positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate, and introducing a first flow of a first process gas and a second flow of a second process gas to the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.Type: ApplicationFiled: December 23, 2019Publication date: July 2, 2020Inventors: Chuanxi YANG, Hang YU, Sanjay KAMATH, Deenesh PADHI, Honggun KIM, Euhngi LEE, Zubin HUANG, Diwakar N. KEDLAYA, Rui CHENG, Karthik JANAKIRAMAN
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Publication number: 20200041407Abstract: Systems and methods used to deliver a processing gas having a desired diborane concentration to a processing volume of a processing chamber are provided herein. In one embodiment a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, individual ones of the plurality of windows are disposed at opposite ends of the body and the body and the plurality of windows collectively define a cell volume. The borane concentration sensor further includes a radiation source disposed outside of the cell volume proximate to a first window of the plurality of windows, and a radiation detector disposed outside the cell volume proximate to a second window of the plurality of windows.Type: ApplicationFiled: July 2, 2019Publication date: February 6, 2020Inventors: Zubin HUANG, Sarah Langlois WHITE, Jonathan Robert BAKKE, Diwakar N. KEDLAYA, Juan Carlos ROCHA, Fang RUAN
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Publication number: 20200043722Abstract: Embodiments of the present disclosure relate to deposition methods for dielectric layers with zero pattern loading characteristics. In one embodiment, the method includes depositing a conformal dielectric layer on the substrate having a patterned area and a blanket area by exposing the substrate to a deposition precursor and a tuning gas simultaneously without the presence of plasma in a process chamber, wherein the deposition precursor is reacted to form a chemical reaction by-product, and the chemical reaction by-product is the same as the tuning gas, and wherein the deposition precursor and the tuning gas are provided at an amount that is more than required for the deposition reaction to occur at the patterned area and the blanket area.Type: ApplicationFiled: July 17, 2019Publication date: February 6, 2020Inventors: Rui CHENG, Karthik JANAKIRAMAN, Zubin HUANG, Diwakar N. KEDLAYA
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Patent number: 10537965Abstract: Embodiments described herein relate to the rapid thermal processing of substrates. A fiber coupled laser diode array is provided in an optical system configured to generate a uniform irradiance pattern on the surface of a substrate. A plurality of individually controllable laser diodes are optically coupled via a plurality of fibers to one or more lenses. The fiber coupled laser diode array generates a Gaussian radiation profile which is defocused by the lenses to generate a uniform intensity image. In one embodiment, a field stop is disposed within the optical system.Type: GrantFiled: February 4, 2014Date of Patent: January 21, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Douglas E. Holmgren, Samuel C. Howells, Aaron Muir Hunter, Theodore P. Moffitt, Diwakar N. Kedlaya
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Patent number: 10373823Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.Type: GrantFiled: May 31, 2018Date of Patent: August 6, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Swaminathan T. Srinivasan, Atashi Basu, Pramit Manna, Khokan C. Paul, Diwakar N. Kedlaya
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Patent number: 10256005Abstract: Embodiments of the present disclosure relate to thermal processing of substrates. More specifically, embodiments described herein relate to flash on spike annealing processes and apparatus suitable for performing such processes. In one embodiment, a thermal processing apparatus may include a lamp radiation source, a laser source, and a reflector plate disposed between the lamp radiation source and the laser source. One or more apertures may be formed in the reflector plate and the laser source may be positioned adjacent to the reflector plate such that a laser beam emitted from the laser source propagates through the one or more apertures. In one embodiment, the reflector plate may be substantially circular and the one or more apertures may approximate a sector of the reflector plate.Type: GrantFiled: July 19, 2016Date of Patent: April 9, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Joseph M. Ranish, Shashank Sharma, Diwakar N. Kedlaya, Aaron Muir Hunter
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Publication number: 20180350595Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.Type: ApplicationFiled: May 31, 2018Publication date: December 6, 2018Inventors: Swaminathan T. SRINIVASAN, Atashi BASU, Pramit MANNA, Khokan C. PAUL, Diwakar N. KEDLAYA
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Publication number: 20170032865Abstract: Embodiments of the present disclosure relate to thermal processing of substrates. More specifically, embodiments described herein relate to flash on spike annealing processes and apparatus suitable for performing such processes. In one embodiment, a thermal processing apparatus may include a lamp radiation source, a laser source, and a reflector plate disposed between the lamp radiation source and the laser source. One or more apertures may be formed in the reflector plate and the laser source may be positioned adjacent to the reflector plate such that a laser beam emitted from the laser source propagates through the one or more apertures. In one embodiment, the reflector plate may be substantially circular and the one or more apertures may approximate a sector of the reflector plate.Type: ApplicationFiled: July 19, 2016Publication date: February 2, 2017Inventors: Joseph M. RANISH, Shashank SHARMA, Diwakar N. KEDLAYA, Aaron Muir HUNTER
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Publication number: 20150165551Abstract: Embodiments described herein relate to the rapid thermal processing of substrates. A fiber coupled laser diode array is provided in an optical system configured to generate a uniform irradiance pattern on the surface of a substrate. A plurality of individually controllable laser diodes are optically coupled via a plurality of fibers to one or more lenses. The fiber coupled laser diode array generates a Gaussian radiation profile which is defocused by the lenses to generate a uniform intensity image. In one embodiment, a field stop is disposed within the optical system.Type: ApplicationFiled: February 4, 2014Publication date: June 18, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Douglas E. HOLMGREN, Samuel C. HOWELLS, Aaron Muir HUNTER, Theodore P. MOFFITT, Diwakar N. KEDLAYA