Abstract: A method and apparatus for implementing row hammer avoidance in a dynamic random access memory (DRAM) in a computer system. Hammer detection logic identifies a hit count of repeated activations at a specific row in the DRAM. Monitor and control logic receiving an output of the hammer detection logic compares the identified hit count with a programmable threshold value. Responsive to a specific count as determined by the programmable threshold value, the monitor and control logic captures the address where a selected row hammer avoidance action is provided.

Abstract: A method, system and computer program product are provided for implementing enhanced wear leveling in a stack of flash memory chips. A flash memory includes plurality of flash memory chips including a number N data chips and one or more spare chips. To even wear among the plurality of flash memory chips, a memory controller for the flash memory periodically transfers data from a data chip to a current spare chip, the current spare chip becomes a data chip and the selected data chip becomes the current spare chip. Over time, each chip in the stack becomes the spare chip. If a chip becomes nonfunctional, whatever chip is currently the spare chip becomes a permanent data chip and no more rotating is done.

Abstract: A method, system and computer program product are provided for implementing enhanced wear leveling in a stack of flash memory chips. A flash memory includes plurality of flash memory chips including a number N data chips and one or more spare chips. To even wear among the plurality of flash memory chips, a memory controller for the flash memory periodically transfers data from a data chip to a current spare chip, the current spare chip becomes a data chip and the selected data chip becomes the current spare chip. Over time, each chip in the stack becomes the spare chip. If a chip becomes nonfunctional, whatever chip is currently the spare chip becomes a permanent data chip and no more rotating is done.

Abstract: A method and apparatus for implementing performance in a flash memory system in a computer system. A flash memory chip includes a function engine performing garbage collection and scrub operations using an internal bus for data movement. The system includes an on-flash chip memory buffer buffering garbage collection and scrub requests. Garbage collection and scrub operations are interleaved with mainline reads and writes.

Abstract: A method and apparatus for implementing enhanced performance in a flash memory system in a computer system. A flash memory chip includes a function engine performing garbage collection and scrub operations using an internal bus for data movement. The system includes an on-flash chip memory buffer buffering garbage collection and scrub requests. Garbage collection and scrub operations are interleaved with mainline reads and writes.

Abstract: A method, system and memory controller are provided for implementing ECC (Error Correction Codes) control to provide enhanced endurance and data retention of flash memories. The memory controller includes a VT (threshold voltage) monitor to determine VT degradation of cells and blocks; the VT monitor configured to store information about the determined VT degradation; a first ECC engine having a first level of ECC capability; a second ECC engine having a second level of ECC capability, the second level higher than the first level, the second ECC engine having a longer latency than the first ECC engine; a logic to issue a read request to a particular cell/block, and, using the determined VT degradation, use the first ECC engine if the determined VT degradation is less than a threshold and to use the second ECC engine if the determined VT degradation is above the threshold.

Abstract: A method and apparatus for implementing row hammer avoidance in a dynamic random access memory (DRAM) in a computer system. Hammer detection logic identifies a hit count of repeated activations at a specific row in the DRAM. Monitor and control logic receiving an output of the hammer detection logic compares the identified hit count with a programmable threshold value. Responsive to a specific count as determined by the programmable threshold value, the monitor and control logic captures the address where a selected row hammer avoidance action is provided.

Abstract: A method and apparatus for implementing enhanced performance in a flash memory system in a computer system. A flash memory chip includes a function engine performing garbage collection and scrub operations using an internal bus for data movement, preserving I/O bandwidth. The system includes an on-flash chip memory buffer buffering garbage collection and scrub requests. Garbage collection and scrub operations are interleaved with mainline reads and writes.

Abstract: A method and apparatus for implementing enhanced performance in a flash memory system in a computer system. A flash memory chip includes a function engine performing garbage collection and scrub operations using an internal bus for data movement, preserving I/O bandwidth. The system includes an on-flash chip memory buffer buffering garbage collection and scrub requests. Garbage collection and scrub operations are interleaved with mainline reads and writes.

Abstract: A method, system and memory controller for implementing enhanced security in a memory subsystem including DRAM in a computer system. A memory includes a register to hold scrambling information transmitted from a memory controller; and scrambling circuitry on the memory to scramble at least one of bank select bits and data bits responsive to the scrambling information in the register.

Abstract: A method, system and memory controller for implementing enhanced security in a memory subsystem including DRAM in a computer system. A memory includes a register to hold scrambling information transmitted from a memory controller; and scrambling circuitry on the memory to scramble at least one of bank select bits and data bits responsive to the scrambling information in the register.

Abstract: A method, system and memory controller are provided for implementing ECC (Error Correction Codes) control to provide enhanced endurance and data retention of flash memories. The memory controller includes a VT (threshold voltage) monitor to determine VT degradation of cells and blocks; the VT monitor configured to store information about the determined VT degradation; a first ECC engine having a first level of ECC capability; a second ECC engine having a second level of ECC capability, the second level higher than the first level, the second ECC engine having a longer latency than the first ECC engine; a logic to issue a read request to a particular cell/block, and, using the determined VT degradation, use the first ECC engine if the determined VT degradation is less than a threshold and to use the second ECC engine if the determined VT degradation is above the threshold.

Abstract: A method, system and computer program product are provided for implementing enhanced wear leveling in a stack of flash memory chips. A flash memory includes plurality of flash memory chips including a number N data chips and one or more spare chips. To even wear among the plurality of flash memory chips, a memory controller for the flash memory periodically transfers data from a data chip to a current spare chip, the current spare chip becomes a data chip and the selected data chip becomes the current spare chip. Over time, each chip in the stack becomes the spare chip. If a chip becomes nonfunctional, whatever chip is currently the spare chip becomes a permanent data chip and no more rotating is done.

Abstract: A method, system and computer program product are provided for implementing enhanced wear leveling in a stack of flash memory chips. A flash memory includes plurality of flash memory chips including a number N data chips and one or more spare chips. To even wear among the plurality of flash memory chips, a memory controller for the flash memory periodically transfers data from a data chip to a current spare chip, the current spare chip becomes a data chip and the selected data chip becomes the current spare chip. Over time, each chip in the stack becomes the spare chip. If a chip becomes nonfunctional, whatever chip is currently the spare chip becomes a permanent data chip and no more rotating is done.

Abstract: A method, system and memory controller for implementing enhanced security in a memory subsystem including DRAM in a computer system. A memory includes a register to hold scrambling information transmitted from a memory controller; and scrambling circuitry on the memory to scramble at least one of bank select bits and data bits responsive to the scrambling information in the register.

Abstract: A method, system and memory controller for implementing enhanced security in a memory subsystem including DRAM in a computer system. A memory includes a register to hold scrambling information transmitted from a memory controller; and scrambling circuitry on the memory to scramble at least one of bank select bits and data bits responsive to the scrambling information in the register.

Abstract: According to a method herein, a portion of an electronic circuit is identified. The electronic circuit comprises logic circuitry. The portion of the electronic circuit is designed in at least two versions. Each of the at least two versions is evaluated using a plurality of operating conditions. The current operating conditions are determined. One version of the at least two versions is identified as a selected version based on the performance under the current operating conditions. The selected version has relatively optimal performance based on at least one of clock frequency, supply voltage, and power limit. The selected version is activated for use in the portion of the electronic circuit. The remaining versions of the at least two versions are deactivated.

Abstract: A method, system and memory controller are provided for implementing ECC (Error Correction Codes) control to provide enhanced endurance and data retention of flash memories. The memory controller includes a VT (threshold voltage) monitor to determine VT degradation of cells and blocks; the VT monitor configured to store information about the determined VT degradation; a first ECC engine having a first level of ECC capability; a second ECC engine having a second level of ECC capability, the second level higher than the first level, the second ECC engine having a longer latency than the first ECC engine; a logic to issue a read request to a particular cell/block, and, using the determined VT degradation, use the first ECC engine if the determined VT degradation is less than a threshold and to use the second ECC engine if the determined VT degradation is above the threshold.

Abstract: A method, system and memory controller are provided for implementing ECC (Error Correction Codes) control to provide enhanced endurance and data retention of flash memories. The memory controller includes a VT (threshold voltage) monitor to determine VT degradation of cells and blocks; the VT monitor configured to store information about the determined VT degradation; a first ECC engine having a first level of ECC capability; a second ECC engine having a second level of ECC capability, the second level higher than the first level, the second ECC engine having a longer latency than the first ECC engine; a logic to issue a read request to a particular cell/block, and, using the determined VT degradation, use the first ECC engine if the determined VT degradation is less than a threshold and to use the second ECC engine if the determined VT degradation is above the threshold.

Abstract: According to a method herein, a portion of an electronic circuit is identified. The electronic circuit comprises logic circuitry. The portion of the electronic circuit is designed in at least two versions. Each of the at least two versions is evaluated using a plurality of operating conditions. The current operating conditions are determined. One version of the at least two versions is identified as a selected version based on the performance under the current operating conditions. The selected version has relatively optimal performance based on at least one of clock frequency, supply voltage, and power limit. The selected version is activated for use in the portion of the electronic circuit. The remaining versions of the at least two versions are deactivated.