Patents by Inventor Dmitri A. Tschumakow

Dmitri A. Tschumakow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar transistor
    Patent number: 10032893
    Abstract: A bipolar transistor comprises a semiconductor body including a collector region and a base region arranged on top of the collector region. The base region has a first crystalline structure and is at least partly doped with dopants of a first doping type. The collector region is laterally enclosed by a trench isolation and is doped with dopants of a second doping type. The transistor further comprises a conductive base contact layer laterally enclosing the base region which is doped with dopants of the first doping type. The base contact layer comprises a part with the first crystalline structure and a part with a second crystalline structure, wherein the part with the second crystalline structure laterally encloses the part with the first crystalline structure. The transistor further comprises an emitter region arranged on the base region.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: July 24, 2018
    Assignee: Infineon Technologies AG
    Inventors: Armin Tilke, Claus Dahl, Dmitri A. Tschumakow
  • BIPOLAR TRANSISTOR
    Publication number: 20160093722
    Abstract: A bipolar transistor comprises a semiconductor body including a collector region and a base region arranged on top of the collector region. The base region has a first crystalline structure and is at least partly doped with dopants of a first doping type. The collector region is laterally enclosed by a trench isolation and is doped with dopants of a second doping type. The transistor further comprises a conductive base contact layer laterally enclosing the base region which is doped with dopants of the first doping type. The base contact layer comprises a part with the first crystalline structure and a part with a second crystalline structure, wherein the part with the second crystalline structure laterally encloses the part with the first crystalline structure. The transistor further comprises an emitter region arranged on the base region.
    Type: Application
    Filed: September 21, 2015
    Publication date: March 31, 2016
    Inventors: Armin Tilke, Claus Dahl, Dmitri A. Tschumakow