Patents by Inventor Dmitri Alex Tschumakow

Dmitri Alex Tschumakow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160190277
    Abstract: According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
    Type: Application
    Filed: March 8, 2016
    Publication date: June 30, 2016
    Inventors: Dmitri Alex Tschumakow, Claus Dahl, Armin Tilke
  • Patent number: 9312369
    Abstract: According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: April 12, 2016
    Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH
    Inventors: Dmitri Alex Tschumakow, Claus Dahl, Armin Tilke
  • Publication number: 20160099311
    Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
    Type: Application
    Filed: December 15, 2015
    Publication date: April 7, 2016
    Inventors: Dmitri Alex TSCHUMAKOW, Erhard LANDGRAF, Claus DAHL, Steffen ROTHENHAEUSSER
  • Patent number: 9219117
    Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: December 22, 2015
    Assignee: Infineon Technologies AG
    Inventors: Dmitri Alex Tschumakow, Erhard Landgraf, Claus Dahl, Steffen Rothenhaeusser
  • Publication number: 20150357446
    Abstract: According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.
    Type: Application
    Filed: June 4, 2014
    Publication date: December 10, 2015
    Applicant: Infineon Technologies Dresden GmbH
    Inventors: Dmitri Alex Tschumakow, Claus Dahl, Armin Tilke
  • Publication number: 20150303254
    Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
    Type: Application
    Filed: April 22, 2014
    Publication date: October 22, 2015
    Applicant: Infineon Technologies AG
    Inventors: Dmitri Alex Tschumakow, Erhard Landgraf, Claus Dahl, Steffen Rothenhaeusser