Abstract: A method of etching dissimilar materials having interfaces at non-perpendicular angles to the direction of the etch propagation that results in a low selectivity etch in order to achieve an improved planarized etched surface. The method includes the step of subjecting the dissimilar materials to a process gas mixture that includes a first gas that dominates the etching of a first material and a second gas that dominates the etching of a second material. The flow rates for the first and second materials are selected, along with other parameters of the plasma etch apparatus, to substantially equalize the etching rates for the two materials. This method is particularly useful to achieve a low-selective etching of materials having interfaces that are at a non-perpendicular angle with respect to the etch propagation.

Abstract: A method of low-damage, anisotropic etching of substrates including mounting the substrate upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

Abstract: A method of forming a shallow-deep trench isolation (SDTI) is provided that includes the steps of forming a pair of deep trenches through a silicon on insulator (SOI) layer without substantially disturbing an underlying buried oxide (BOX) layer. Once the deep trenches are formed, the trenches are filed with suitable electrical isolating materials, such as undoped poly-silicon or dielectric material, and etched back to obtain a substantially planarized top surface. Subsequently, an active nitride layer is deposited on the planarized top surface, and then a pair of shallow trenches are formed. The shallow trenches are formed using a low selectivity etch to uniformly etch a deep trench liner oxide, the SOI layer and the electrical isolating material which have interfaces at non-perpendicular angles with respect to the direction of the etching. Once the shallow and deep trenches are formed, subsequent processing including filling the shallow trench, annealing and chemical-mechanical polishing can be performed.

Abstract: A method of low-damage, anisotropic etching of substrates including mounting the substrate upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

Abstract: The present invention provides a new method and system for producing a digital optical recording. The process can be divided into two separate operations: mastering of the optical recording on the surface of an elongated member, such as a cylinder, etc., and fast replication of the master record onto the surface of flexible film which is essentially parallel to the surface of the cylinder, etc.

Abstract: A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical support located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

Abstract: A method-of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.

Abstract: The present invention is a system and method for reducing the voltage necessary to produce a glow discharge in a gas. This is done by fabricating the cathode in a gas discharge device out of a conductive material that is permeable to the subject gas rather than out of a solid material, as in the prior art. Fabricating the cathode with a permeable material rather than a solid material increases the surface area of the cathode and provides the gas with greater access to the cathode's surface. Increasing the surface area of the cathode increases the total discharge current which can be extracted from the cathode without increasing the extraction voltage. This allows the gas discharge device to be operated at a lower voltage than is possible using a cathode fabricated of a solid material.

Abstract: A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.