Abstract: Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic demultiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.

Abstract: An embodiment includes a magnetic wiggler comprising: first and second magnets adjacent each other in a line of at least 50 magnets; a pathway, adjacent to the line, along which an electron beam may travel that is to couple to a particle accelerator; and a plurality of vias on multiple sides of each of the first and second magnets to provide multiple currents, having opposite directions, respectively to the first and second magnets to orient the first and second magnets with opposing non-volatile orientations. Other embodiments are provided herein.

Abstract: High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes.

Abstract: This disclosure is directed to a self-powered internal medical device. An example device may comprise at least an energy generation module and an operations module to at least control the energy generation module. The energy generation module may include a structure to capture certain molecules in the organic body based at least on size, the structure including a surface of the device in which at least one opening is formed. The at least one opening may be sized to only capture certain molecules. The operations module may initiate oxidation reactions in the captured molecules to generate current for device operation or for storage in an energy storage module. Thermoelectric generation circuitry in the energy generation module may also use heat from the reaction to generate a second current. The operations module may control operation of a sensor module and/or communication module in the device based on the generated energy.

Abstract: Three dimensional integrated circuits including semiconductive organic materials are described. In some embodiments, the three dimensional integrated circuits include one or more electronic components that include a semiconductive region formed of one or more semiconductive organic materials. The electronic components of the three dimensional integrated circuits may also include insulating regions formed from organic insulating materials, and conductive regions form from conductive materials. The three dimensional integrated circuits may be formed by an additive manufacturing process such as three dimensional printing. Apparatus and methods for producing and testing three dimensional integrated circuits are also described.

Abstract: Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.

Abstract: A device including at least two spintronic devices and a method of making the same. A magnetic connector extends between the two spintronic devices to conduct a magnetization between the two. The magnetic connector may further be disposed to conduct current to switch a magnetization of one of the two spintronic devices.

Abstract: An analog associative memory, which includes an array of coupled voltage or current controlled oscillators, matches patterns based on shifting frequencies away from a center frequency of the oscillators. Test and memorized patterns are programmed into the oscillators by varying the voltage or current that controls the oscillators. Matching patterns result in smaller shifts of frequencies and enable synchronization of oscillators. Non-matching patterns result in larger shifts and preclude synchronization of oscillators. The patterns may each include binary data and the pattern matching may be based on discrete shifts. The patterns may each include grayscale data and the pattern matching may be based on continuously-varied shifts. Other embodiments are described herein.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.

Abstract: An embodiment provides power (having low voltage, high current, and high current density) to ultra low voltage non-CMOS based devices using a distributed capacitor that is integrated onto the same chip as the non-CMOS devices. For example, an embodiment provides a spin logic gate adjacent dielectric material and first and second plates of a capacitor. The capacitor discharges low voltage/high current to the spin logic gate using a step down switched mode power supply that charges numerous capacitors during one clock cycle (using a switching element configured in a first orientation) and discharges power from the capacitors during the opposite clock cycle (using the switching element configured in a second orientation). The capacitors discharge the current out of plane and to the spin logic devices without having to traverse long power dissipating interconnect paths. Other embodiments are described herein.

Abstract: Cross point array magnetoresistive random access memory (MRAM) implementing spin hall magnetic tunnel junction (MTJ)-based devices and methods of operation of such arrays are described. For example, a bit cell for a non-volatile memory includes a magnetic tunnel junction (MTJ) stack disposed above a substrate and having a free magnetic layer disposed above a dielectric layer disposed above a fixed magnetic layer. The bit cell also includes a spin hall metal electrode disposed above the free magnetic layer of the MTJ stack.

Abstract: Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic demultiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.

Abstract: A sensing and responsive fabric is described. In one example the fabric has a sensor formed of a fiber of the fabric, a transducer formed of a fiber of the fabric, and a processor coupled to the sensor to measure a sensor characteristic and to the transducer to apply power to the transducer based on the sensor measurement.

Abstract: A transparent light emitting display is described. A display has a transparent substrate, a plurality of light emitting elements on the substrate, and transparent wires on the substrate to provide an electrical connection to each light emitting element.

Abstract: Described herein are technologies related to a semiconductor package that is installed in a portable device for data communications. More particularly, the semiconductor package that contains a memory, a digital logic chip, and an optical port in a single module or mold is described.

Abstract: Three dimensional integrated circuits including semiconductive organic materials are described. In some embodiments, the three dimensional integrated circuits include one or more electronic components that include a semiconductive region formed of one or more semiconductive organic materials. The electronic components of the three dimensional integrated circuits may also include insulating regions formed from organic insulating materials, and conductive regions form from conductive materials. The three dimensional integrated circuits may be formed by an additive manufacturing process such as three dimensional printing. Apparatus and methods for producing and testing three dimensional integrated circuits are also described.

Abstract: Generally, this disclosure provides systems and methods for generating three dimensional holographic images on a transparent display screen with dynamic image control. The system may include a transparent display screen that includes an array of pixels; a driver circuit configured to control each of the pixels in the array of pixels such that the transparent display screen displays an interference fringe pattern, the interference fringe pattern associated with a hologram; and a coherent light source configured to illuminate the transparent display screen with coherent light, wherein transformation of the coherent light by the interference fringe pattern generates a three dimensional holographic image.

Abstract: High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes.

Abstract: Described are apparatus and method for simulating spintronic integrated circuit (SPINIC), the method comprising: generating a spin netlist indicating connections of spin nodes of spin circuits and nodes of general circuits; and modifying a modified nodal analysis (MNA) matrix for general circuits to generate a spin MNA matrix for solving spin circuits and general circuits of the spin netlist.