Patents by Inventor Dmitri Efetov

Dmitri Efetov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Locally gated graphene nanostructures and methods of making and using
    Patent number: 8659009
    Abstract: A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: February 25, 2014
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Barbaros Ozyilmaz, Dmitri Efetov, Pablo Jarillo-Herrero, Philip Kim
  • Locally gated graphene nanostructures and methods of making and using
    Publication number: 20090140801
    Abstract: A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
    Type: Application
    Filed: October 31, 2008
    Publication date: June 4, 2009
    Applicant: The Trustees of Columbia University in the City of New York
    Inventors: Barbaros Ozyilmaz, Dmitri Efetov, Pablo Jarillo-Herrero, Melinda Y. Han, Philip Kim