Patents by Inventor Dmitri Martyshkin

Dmitri Martyshkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
    Patent number: 8284805
    Abstract: Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: October 9, 2012
    Assignee: The UAB Research Foundation
    Inventors: Sergey B. Mirov, Vladimir V. Fedorov, Dmitri Martyshkin
  • Electrically Pumped Broadly Tunable Mid-Infrared Lasers based on Quantum Confined Transition Metal Doped Semiconductors
    Publication number: 20090304034
    Abstract: Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
    Type: Application
    Filed: March 12, 2007
    Publication date: December 10, 2009
    Inventors: Sergey B. Mirov, Vladimir V. Fedorov, Dmitri Martyshkin