Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: Methods for modifying the surface termination of two-dimensional (2D) transition metal carbides (MXenes) are provided. The methods, which allow for versatile chemical modification of the terminating anions via halide exchange or substitution and elimination reactions in molten inorganic salts, provide a processing approach that is widely applicable to MXenes as a broad class of functional materials.

Abstract: Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

Abstract: Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

Abstract: Ligand-capped inorganic particles, dispersions of the ligand-capped inorganic particles, and films composed of the ligand-capped inorganic particles are provided. Also provided are methods of patterning the films and electronic, photonic, and optoelectronic devices that incorporate the films. The ligands include bifunctional ligands and two-component ligand systems that include a photosensitive group, cation, or molecule.

Abstract: Colloids comprising inorganic nanocrystals dispersed in a molten salt or a liquid metal are provided. The molten salt may comprise an ion which is a Lewis acid or a Lewis base in the presence of the inorganic nanocrystals. Solid composites formed from the colloids are also provided. Methods of using the colloids as media for inducing chemical transformations using the inorganic nanocrystals are also provided.

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Abstract: Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.

Abstract: Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

Abstract: Chalcogenidometallates of group IIB, IV and V elements and, particularly, alkali metal-containing chalcogenidometallates of cadmium, lead and bismuth are provided. Also provided are methods of using the chalcogenidometallates as molecular solders to form metal chalcogenide structures, including thin films, molded objects and bonded surfaces composed of metal chalcogenides.

Abstract: A backlight unit including: a light source; and a photoconversion layer disposed separately from the light source to convert a wavelength of incident light from the light source and thereby provide converted light, wherein the photoconversion layer includes a polymer matrix and a plurality of anisotropic semiconductor nanocrystals disposed in the polymer matrix, and wherein the polymer matrix includes a polymer having a repeating unit represented by Chemical Formula 1: wherein R1 is hydrogen or a methyl group, each R2 is independently hydrogen or a C1 to C3 alkyl group, and R3 is a C2 to C5 alkyl group, wherein the polymer exhibits elasticity at a temperature between a glass transition temperature of the polymer and about 100° C., and wherein the plurality of anisotropic semiconductor nanocrystals are aligned along a long axis thereof for the photoconversion layer to emit polarized light.

Abstract: Colloids comprising inorganic nanocrystals dispersed in a molten salt or a liquid metal are provided. The molten salt may comprise an ion which is a Lewis acid or a Lewis base in the presence of the inorganic nanocrystals. Solid composites formed from the colloids are also provided. Methods of using the colloids as media for inducing chemical transformations using the inorganic nanocrystals are also provided.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Abstract: Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Abstract: Chalcogenidometallates of group IIB, IV and V elements and, particularly, alkali metal-containing chalcogenidometallates of cadmium, lead and bismuth are provided. Also provided are methods of using the chalcogenidometallates as molecular solders to form metal chalcogenide structures, including thin films, molded objects and bonded surfaces composed of metal chalcogenides.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Abstract: A backlight unit including: a light source; and a photoconversion layer disposed separately from the light source to convert a wavelength of incident light from the light source and thereby provide converted light, wherein the photoconversion layer includes a polymer matrix and a plurality of anisotropic semiconductor nanocrystals disposed in the polymer matrix, and wherein the polymer matrix includes a polymer having a repeating unit represented by Chemical Formula 1: wherein R1 is hydrogen or a methyl group, each R2 is independently hydrogen or a C1 to C3 alkyl group, and R3 is a C2 to C5 alkyl group, wherein the polymer exhibits elasticity at a temperature between a glass transition temperature of the polymer and about 100° C., and wherein the plurality of anisotropic semiconductor nanocrystals are aligned along a long axis thereof for the photoconversion layer to emit polarized light.