Patents by Inventor Dmitri Zalmanovitch Garbuzov

Dmitri Zalmanovitch Garbuzov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020186730
    Abstract: An integrated multiple-wavelength semiconductor pump laser module operable to generate a plurality of optical wavelength outputs on a single fiber comprising a base layer containing a multi-wavelength laser array and a wavelength multiplexer or combiner unit to produce a single output from a plurality of laser wavelengths. The laser array is operable to emit a plurality of wavelengths and each of the laser outputs is substantially oppositely opposed and proximately located to a corresponding combiner input such that laser output enters the combiner input without the use of optical fibers. In one aspect of the invention, the laser array is composed of individual high power DFB lasers. In a second aspect of the invention, the laser array is composed of a single material containing a plurality of lasers fabricated by altering the quantum well widths within the material. In a third aspect of the invention, the laser array and combiner unit are concurrently fabricated within a base layer of semiconductor material.
    Type: Application
    Filed: September 17, 2001
    Publication date: December 12, 2002
    Inventor: Dmitri Zalmanovitch Garbuzov
  • Patent number: 5818860
    Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5.times.10.sup.16 /cm.sup.3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: October 6, 1998
    Assignee: David Sarnoff Research Center, Inc.
    Inventors: Dmitri Zalmanovitch Garbuzov, Joseph Hy Abeles, John Charles Connolly