Abstract: An APD includes a photoconverter and at least one avalanche amplifier of the photocurrent, the amplifier having two layers—a contact layer and a multiplication layer, wherein the multiplication layer is formed on top of the entire conductive wafer, while the contact layer of at least one avalanche amplifier is formed on top of a certain area of the multiplication layer. Meanwhile, outside the contact layer, the multiplication layer functions as a photoconverter. This makes it possible for photocarriers to get into the avalanche amplifier effectively and unimpeded. In order to mitigate the influence of parasite near-surface charge carriers on the avalanche amplifier, its multiplication region is deepened in relation to the upper surface of the photoconverter region. The proposed APD embodiment with less dark current seeping from peripheral areas of the instrument provides higher threshold sensitivity that allows it be on par with state of the art.

Abstract: An APD includes a photoconverter and at least one avalanche amplifier of the photocurrent, the amplifier having two layers—a contact layer and a multiplication layer, wherein the multiplication layer is formed on top of the entire conductive wafer, while the contact layer of at least one avalanche amplifier is formed on top of a certain area of the multiplication layer. Meanwhile, outside the contact layer, the multiplication layer functions as a photoconverter. This makes it possible for photocarriers to get into the avalanche amplifier effectively and unimpeded. In order to mitigate the influence of parasite near-surface charge carriers on the avalanche amplifier, its multiplication region is deepened in relation to the upper surface of the photoconverter region. The proposed APD embodiment with less dark current seeping from peripheral areas of the instrument provides higher threshold sensitivity that allows it be on par with state of the art.

Abstract: Method for manufacturing avalanche photodetector, including forming multiplication layer on wafer; etching closed groove on surface of the multiplication layer, so that depth of the closed groove is greater than or equal to thickness of the multiplication layer, but less than total thickness of the wafer and multiplication layer combined; filling the groove with highly-doped polycrystalline silicon of same conductivity type as multiplication layer; forming, on upper surface of multiplication layer, inside groove, avalanche amplifier as mesa structure, by forming contact layer on multiplication layer, while simultaneously forming photoconverter outside contact layer, and etching away portion of multiplication layer in the photoconverter to depth less than thickness of the multiplication layer; forming dielectric layer on multiplication layer where etching took place, its thickness equal to the depth of multiplication layer that was etched away; forming first electrode of transparent material on surfaces of con

Abstract: An avalanche photodetector (APD) is proposed, wherein a photoconverter and at least one avalanche amplifier are located on the same wafer, its multiplication layer covers the entire surface of the conductive wafer, and its contact layer is formed in some region of the multiplication layer. Outside the contact layer, the multiplication layer functions as a photoconverter, thus facilitating the photocarriers getting into the avalanche amplifier. A dielectric-filled circular groove surrounding the avalanche amplifier suppresses photoelectric communication noises generated by neighboring avalanche amplifiers, thus allowing to manufacture multi-channel avalanche instruments with higher threshold sensitivity.